JPS54150091A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54150091A JPS54150091A JP5922778A JP5922778A JPS54150091A JP S54150091 A JPS54150091 A JP S54150091A JP 5922778 A JP5922778 A JP 5922778A JP 5922778 A JP5922778 A JP 5922778A JP S54150091 A JPS54150091 A JP S54150091A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- regions
- diffusion
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To reduce the noise of J-FET as well as to secure a high density by providing the high impurity density region enclosed by the insulator film within the channel region held between the source and gate region.
CONSTITUTION: N+-type buried regions 31a∼31c are formed by diffusion on P-type Si substrate 1, and N-type layer 32 is epitaxial-grown on the entire surface. Then P+-type region 33 is formed by diffusion, and layer 32 is isolated into the island shape. At the same time, P-type well regions 34a and 34c which are to be the gate and resistance region are provided within island region 32 in opposition to regions 31a and 31c each. And P-channel P+-type gate contact region 36 is provided within region 34a, and P+-type base region 35 of the NPN element is formed by diffusion within region 32 opposing to region 31b respectively. After this, N+-type emitter region 37, N+-type source and drain regions 38 and 39, and N+-type contact parts 40 and 41 are provided within region 35, regions 34a and 34c respectively. And P+- type surface region 46 enclosed by SiO2 film 45 is formed within channel 42a produced between regions 38 and 39.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5922778A JPS54150091A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5922778A JPS54150091A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54150091A true JPS54150091A (en) | 1979-11-24 |
JPS6135713B2 JPS6135713B2 (en) | 1986-08-14 |
Family
ID=13107270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5922778A Granted JPS54150091A (en) | 1978-05-17 | 1978-05-17 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54150091A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393998A (en) * | 1992-07-17 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device containing junction field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061984A (en) * | 1973-10-01 | 1975-05-27 | ||
JPS5124874A (en) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | SETSUGOGATADENKAIKOKATORANJISUTA |
-
1978
- 1978-05-17 JP JP5922778A patent/JPS54150091A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5061984A (en) * | 1973-10-01 | 1975-05-27 | ||
JPS5124874A (en) * | 1974-08-23 | 1976-02-28 | Nippon Telegraph & Telephone | SETSUGOGATADENKAIKOKATORANJISUTA |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5393998A (en) * | 1992-07-17 | 1995-02-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device containing junction field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPS6135713B2 (en) | 1986-08-14 |
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