JPS54127689A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS54127689A JPS54127689A JP3517878A JP3517878A JPS54127689A JP S54127689 A JPS54127689 A JP S54127689A JP 3517878 A JP3517878 A JP 3517878A JP 3517878 A JP3517878 A JP 3517878A JP S54127689 A JPS54127689 A JP S54127689A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- featuring
- dielectric strength
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Abstract
PURPOSE:To obtain a semiconductor integrated circuit in which the elements such as I<2>L and the high dielectric strength bipolar transistor featuring the different dielectric strength to each other coexist without impairing each characteristics. CONSTITUTION:Sb, As and the like are diffused selectively on the surface of P-type Si substrate 1 to obtain n<+>-type buried layer 21 and 22 featuring a high density, and n<->-type layer 3 is epitaxial-grown on the entire surface. Layer 21 and 22 become the high dielectric strength bipolar Jr formation region and the I<2>L formation region respectively. After this, Sb, As or the like are diffused selectively again only at the I<2>L region to obtain high-density n<+>-type buried layer 4, and then n<->-type layer 5 is epitaxial-grown. The phosphorus or the like is diffused selectively at the I<2>L region on the surface of layer 5 to obtain n-type layer 6 featuring higher density than layer 5, and then P<+>-type layer 7 reaching substrate 1 in depth is formed by diffusion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3517878A JPS54127689A (en) | 1978-03-27 | 1978-03-27 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3517878A JPS54127689A (en) | 1978-03-27 | 1978-03-27 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54127689A true JPS54127689A (en) | 1979-10-03 |
JPS5628019B2 JPS5628019B2 (en) | 1981-06-29 |
Family
ID=12434588
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3517878A Granted JPS54127689A (en) | 1978-03-27 | 1978-03-27 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54127689A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164559A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Semiconductor integrated circuit device |
JPS58142564A (en) * | 1982-02-18 | 1983-08-24 | Nec Corp | Semiconductor device and manufacture thereof |
US4692784A (en) * | 1983-04-12 | 1987-09-08 | Nec Corporation | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52154383A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1978
- 1978-03-27 JP JP3517878A patent/JPS54127689A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52154383A (en) * | 1976-06-18 | 1977-12-22 | Hitachi Ltd | Semiconductor integrated circuit device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164559A (en) * | 1981-04-02 | 1982-10-09 | Toshiba Corp | Semiconductor integrated circuit device |
JPS58142564A (en) * | 1982-02-18 | 1983-08-24 | Nec Corp | Semiconductor device and manufacture thereof |
US4692784A (en) * | 1983-04-12 | 1987-09-08 | Nec Corporation | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices |
Also Published As
Publication number | Publication date |
---|---|
JPS5628019B2 (en) | 1981-06-29 |
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