JPS648672A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS648672A JPS648672A JP16232087A JP16232087A JPS648672A JP S648672 A JPS648672 A JP S648672A JP 16232087 A JP16232087 A JP 16232087A JP 16232087 A JP16232087 A JP 16232087A JP S648672 A JPS648672 A JP S648672A
- Authority
- JP
- Japan
- Prior art keywords
- type
- recess
- power mosfet
- layer
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To easily obtain a thick P-type epitaxial layer, to improve punch- through breakdown strength, and to ensure high breakdown strength of element isolation by etching the epitaxial layer of a section for forming a power MOSFET to form a recess. CONSTITUTION:Before an N<+> type buried layer 5 is formed, a P-type epitaxial layer 3 of a power MOSFET is etched to form a recess having 15-20mum of depth. N-type impurities of phosphorus 51 and antimony 5 are deposited in the recess, diffused to be easily connected to an N+ type substrate 1, the resistance of an N-type epitaxial layer 4 excessively thickened due to the recess can be reduced by the side rise of an N-type diffused layer 51 at the time of forming a dispersively diffused layer 6 to prevent the ON resistance of the power MOSFET from increasing. An N<+> type buried layer 5 can be also formed in a circuit, thereby forming a Bi-CMOS circuit having preferable characteristics. Thus, an island having sufficiently high breakdown strength of isolation and an island of the power MOSFET can coexist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62162320A JP2518855B2 (en) | 1987-07-01 | 1987-07-01 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62162320A JP2518855B2 (en) | 1987-07-01 | 1987-07-01 | Semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS648672A true JPS648672A (en) | 1989-01-12 |
| JP2518855B2 JP2518855B2 (en) | 1996-07-31 |
Family
ID=15752289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62162320A Expired - Fee Related JP2518855B2 (en) | 1987-07-01 | 1987-07-01 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2518855B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100487412B1 (en) * | 2002-09-24 | 2005-05-03 | 매그나칩 반도체 유한회사 | Method for fabricating of semiconductor device |
| US9685524B2 (en) | 2005-03-11 | 2017-06-20 | Vishay-Siliconix | Narrow semiconductor trench structure |
| US9887266B2 (en) | 2006-03-21 | 2018-02-06 | Vishay-Siliconix | Ultra-low drain-source resistance power MOSFET |
| US10354920B2 (en) | 2011-11-22 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company | Methods and apparatus for MOS capacitors in replacement gate process |
-
1987
- 1987-07-01 JP JP62162320A patent/JP2518855B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100487412B1 (en) * | 2002-09-24 | 2005-05-03 | 매그나칩 반도체 유한회사 | Method for fabricating of semiconductor device |
| US9685524B2 (en) | 2005-03-11 | 2017-06-20 | Vishay-Siliconix | Narrow semiconductor trench structure |
| US9887266B2 (en) | 2006-03-21 | 2018-02-06 | Vishay-Siliconix | Ultra-low drain-source resistance power MOSFET |
| US10354920B2 (en) | 2011-11-22 | 2019-07-16 | Taiwan Semiconductor Manufacturing Company | Methods and apparatus for MOS capacitors in replacement gate process |
| US10720361B2 (en) | 2011-11-22 | 2020-07-21 | Taiwan Semiconductor Manufacturing Company | Methods and apparatus for MOS capacitors in replacement gate process |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2518855B2 (en) | 1996-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2515745B2 (en) | Method for manufacturing semiconductor device | |
| JPS54157092A (en) | Semiconductor integrated circuit device | |
| JPS5586151A (en) | Manufacture of semiconductor integrated circuit | |
| US3972754A (en) | Method for forming dielectric isolation in integrated circuits | |
| JPS55128884A (en) | Semiconductor photodetector | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| US3928091A (en) | Method for manufacturing a semiconductor device utilizing selective oxidation | |
| JPS648672A (en) | Semiconductor device and manufacture thereof | |
| JPS5473585A (en) | Gate turn-off thyristor | |
| JPS56108255A (en) | Semiconductor integrated circuit | |
| JPS55105340A (en) | Semiconductor device and its manufacturing method | |
| JPS6431434A (en) | Semiconductor integrated circuit | |
| GB1271896A (en) | Semiconductor rectifying junction device | |
| JPS56107572A (en) | Semiconductor integrated circuit device | |
| JPS6413759A (en) | Semiconductor device | |
| JPS6482668A (en) | Manufacture of bipolar transistor | |
| JPS5563879A (en) | Semiconductor device | |
| JPS5481785A (en) | Iil-type semiconductor integrated circuit | |
| JPS5612779A (en) | Zener diode | |
| JPS6453572A (en) | Semiconductor integrated circuit device with bipolar element | |
| JPS54113282A (en) | Integrated circuit unit | |
| JPS5655078A (en) | Semiconductor device | |
| JPS5561828A (en) | Constant voltage circuit device | |
| JPS5265689A (en) | Semiconductor integrated circuit and its production | |
| JPS649637A (en) | Composite semiconductor circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |