JPS6431434A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS6431434A JPS6431434A JP18817187A JP18817187A JPS6431434A JP S6431434 A JPS6431434 A JP S6431434A JP 18817187 A JP18817187 A JP 18817187A JP 18817187 A JP18817187 A JP 18817187A JP S6431434 A JPS6431434 A JP S6431434A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- oxide film
- silicon
- type
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the integration of a semiconductor device by providing a P-N junction formed in contact with the lower part of a second conductivity type region which occupies at least the upper part of the groove of a semiconductor filler. CONSTITUTION:A silicon oxide film 203 is formed on a semiconductor substrate surface having a high concentration P-type semiconductor layer 201a made of silicon, a low concentration P-type semiconductor layer 201b and a low concentration N-type semiconductor layer 202, a silicon nitride film 210 is formed thereon, and a groove 211 is formed. Then, after the surface of the groove 211 is oxidized, the oxide film of the bottom of the groove is removed, and an insulating sidewall made of a silicon oxide film 205 covering the side face of the groove 211 is formed, and a semiconductor filler 212 made of a P-type impurity-doped silicon epitaxially grown layer is formed. Then, N-type impurity atoms, such as phosphorus are added to the filler 212 to form an N-type region 208, a silicon oxide film 213 is formed, and the silicon nitride film 210 is removed. Then, a hole 214 is selectively formed partly on the groove, and an aluminum electrode 109 is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18817187A JPS6431434A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18817187A JPS6431434A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6431434A true JPS6431434A (en) | 1989-02-01 |
Family
ID=16219000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18817187A Pending JPS6431434A (en) | 1987-07-27 | 1987-07-27 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6431434A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4300986A1 (en) * | 1992-01-17 | 1993-07-22 | Mitsubishi Electric Corp | Semiconductor device used to insulate element - comprising substrate with impurity region having strip running parallel to main surface |
| US5598019A (en) * | 1993-04-07 | 1997-01-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having trench isolation structure and method of manufacturing the same |
-
1987
- 1987-07-27 JP JP18817187A patent/JPS6431434A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4300986A1 (en) * | 1992-01-17 | 1993-07-22 | Mitsubishi Electric Corp | Semiconductor device used to insulate element - comprising substrate with impurity region having strip running parallel to main surface |
| US5457339A (en) * | 1992-01-17 | 1995-10-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for element isolation and manufacturing method thereof |
| DE4300986C2 (en) * | 1992-01-17 | 1999-08-26 | Mitsubishi Electric Corp | Semiconductor device for element isolation and manufacturing method thereof |
| US5598019A (en) * | 1993-04-07 | 1997-01-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having trench isolation structure and method of manufacturing the same |
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