JPS6431460A - Manufacture of bipolar transistor - Google Patents
Manufacture of bipolar transistorInfo
- Publication number
- JPS6431460A JPS6431460A JP18802587A JP18802587A JPS6431460A JP S6431460 A JPS6431460 A JP S6431460A JP 18802587 A JP18802587 A JP 18802587A JP 18802587 A JP18802587 A JP 18802587A JP S6431460 A JPS6431460 A JP S6431460A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- base
- impurity
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To effectively connect a base active region to a base leading region while reducing (shallow junction) the depth of a base junction by forming a second conductivity type second impurity region except an active region, and then forming a second conductivity type third impurity region in contact with the second conductivity type second impurity region. CONSTITUTION:An N<+> type buried layer 22 is formed on a P-type semiconductor substrate 21, and an N-type insular region 23 is formed thereon. Then, a base leading electrode 26 is formed thereon, covered with an insulating film 27, and an opening 28 is formed. Thereafter, after a BSG film 29 having a P-type impurity is formed on a whole surface, a sidewall 30 is formed on the sidewall of the opening 28, an oxide film 31 is formed on the exposed insular region 23, a P-type graft base region 32 is formed, and a P-type connecting low concentration impurity region 33 is simultaneously formed. Subsequently, the film 31 is etched to form a thin polycrystalline silicon layer 34 on a whole surface including the surface of the exposed region 23, P-type impurity is implanted, annealed to diffuse it in the region 23 to form a P-type base active region 35 on the active region. Accordingly, a connection from the region 32 to the region 35 is effectively performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62188025A JP2625741B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62188025A JP2625741B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of bipolar transistor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35110096A Division JPH09181084A (en) | 1996-12-27 | 1996-12-27 | Fabrication of bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6431460A true JPS6431460A (en) | 1989-02-01 |
JP2625741B2 JP2625741B2 (en) | 1997-07-02 |
Family
ID=16216344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62188025A Expired - Lifetime JP2625741B2 (en) | 1987-07-28 | 1987-07-28 | Manufacturing method of bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2625741B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5010026A (en) * | 1988-08-12 | 1991-04-23 | Sony Corporation | Process for making bipolar transistor |
EP0724297A1 (en) * | 1995-01-30 | 1996-07-31 | Texas Instruments Incorporated | Transistor base contact |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61290761A (en) * | 1985-06-19 | 1986-12-20 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-28 JP JP62188025A patent/JP2625741B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61290761A (en) * | 1985-06-19 | 1986-12-20 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5010026A (en) * | 1988-08-12 | 1991-04-23 | Sony Corporation | Process for making bipolar transistor |
EP0724297A1 (en) * | 1995-01-30 | 1996-07-31 | Texas Instruments Incorporated | Transistor base contact |
Also Published As
Publication number | Publication date |
---|---|
JP2625741B2 (en) | 1997-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20080411 |