JPS6431461A - Manufacture of bipolar transistor - Google Patents
Manufacture of bipolar transistorInfo
- Publication number
- JPS6431461A JPS6431461A JP18802687A JP18802687A JPS6431461A JP S6431461 A JPS6431461 A JP S6431461A JP 18802687 A JP18802687 A JP 18802687A JP 18802687 A JP18802687 A JP 18802687A JP S6431461 A JPS6431461 A JP S6431461A
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity
- base
- layer
- impurity region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To effectively connect a base active region to a base leading region (graft base region) while reducing (shallow junction) by forming second impurity region in contact with a first impurity region with the insulating layer of the sidewall of an impurity containing layer as a mask to be used as a connecting impurity region at the part of the low concentration first impurity region. CONSTITUTION:A sidewall 34 is formed as an insulating layer on the sidewall of a base leading electrode 26. Then, a thin polycrystalline silicon layer 35 is formed on a whole surface including an opening 28, and an impurity, such as B<+> or BF2<+> is implanted by ion implanting. Thereafter, it is annealed to diffuse a P-type impurity implanted to the layer 35 in the surface of an insular region 23, and a base active region 36 is formed as a second conductivity type (P-type) second impurity region by the P-type impurity diffused from the layer 35 in contact with a connecting low concentration impurity region 32. A base active region 36 formed by activating is connected through a connecting low concentration impurity region 32 to a graft base region 31, and further electrically connected to the electrode 26.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18802687A JPS6431461A (en) | 1987-07-28 | 1987-07-28 | Manufacture of bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18802687A JPS6431461A (en) | 1987-07-28 | 1987-07-28 | Manufacture of bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6431461A true JPS6431461A (en) | 1989-02-01 |
Family
ID=16216362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18802687A Pending JPS6431461A (en) | 1987-07-28 | 1987-07-28 | Manufacture of bipolar transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431461A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5010026A (en) * | 1988-08-12 | 1991-04-23 | Sony Corporation | Process for making bipolar transistor |
-
1987
- 1987-07-28 JP JP18802687A patent/JPS6431461A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5010026A (en) * | 1988-08-12 | 1991-04-23 | Sony Corporation | Process for making bipolar transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1424959A (en) | Manufacuture of semiconductor devices | |
JPS6431461A (en) | Manufacture of bipolar transistor | |
JPS6428959A (en) | Manufacture of bipolar transistor | |
GB1494149A (en) | Integrated circuits | |
JPS645063A (en) | Hetero-junction bipolar transistor | |
GB1476555A (en) | Junction isolated bipolar integrated circuit device and method of manufacture thereof | |
JPS5548958A (en) | Semiconductor device | |
JPS5654064A (en) | Semiconductor device | |
JPS6431460A (en) | Manufacture of bipolar transistor | |
JPS5588366A (en) | Semiconductor device | |
JPS51116675A (en) | Manufacturing method for a semiconductor device | |
JPS6428840A (en) | Manufacture of integrated circuit | |
JPS5676563A (en) | Manufacture of semiconductor integrated circuit | |
KR890005885A (en) | Manufacturing method of bipolar transistor | |
JPS5685858A (en) | Semiconductor device | |
JPS6477968A (en) | Semiconductor device | |
JPS6490562A (en) | Manufacture of semiconductor storage device | |
JPS6422067A (en) | Double diffusion type insulated-gate field effect transistor | |
JPS55121680A (en) | Manufacture of semiconductor device | |
JPS6468975A (en) | Manufacture of junction fet | |
JPS5728356A (en) | Semiconductor device and manufacture thereof | |
JPS6348865A (en) | Semiconductor device | |
JPS5658258A (en) | Semiconductor integrated circuit | |
JPS6437874A (en) | Monitoring bipolar transistor | |
JPS5559735A (en) | Substrate body for semiconductor integrated circuit and its preparation |