JPS5548958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5548958A
JPS5548958A JP12182878A JP12182878A JPS5548958A JP S5548958 A JPS5548958 A JP S5548958A JP 12182878 A JP12182878 A JP 12182878A JP 12182878 A JP12182878 A JP 12182878A JP S5548958 A JPS5548958 A JP S5548958A
Authority
JP
Japan
Prior art keywords
type
regions
region
separation region
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12182878A
Other languages
Japanese (ja)
Other versions
JPS6146972B2 (en
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12182878A priority Critical patent/JPS5548958A/en
Publication of JPS5548958A publication Critical patent/JPS5548958A/en
Publication of JPS6146972B2 publication Critical patent/JPS6146972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Abstract

PURPOSE:To prevent the generation of a parasitic transistor effectively, by forming a separation region of a p-type region placed between shallow n-type regions when two p-type regions provided on an n-type semiconductor layer are separated into elements and shortcircuiting these elements on the surface. CONSTITUTION:By diffusion, two p-type regions 2a and 2b, which are to become anode regions, are formed on n-type semiconductor base 1, which is to become a common cathode region, and thereby two diodes are obtained. These are separated by using a separation region in the following manner. That is, by diffusion, deep p-type element-separation region 6 is formed between regions 2a and 2b, and also by diffusion shallow n<+>-type regions are formed on the surfaces of both sides of this P-type region. Subsequently, the entire area is covered with SiO2 film 3. By providing openings, metal electrodes 4a and 4b are fitted to regions 2a and 2b, to which terminals A1 and A2 are connected. At this time, metal electrode 8 is fetted on the surface of regions 6 and 7, and they are shortcuited and used as a P-type separation region. Next, terminal K is fitted on the back of base 1 via an n<+>-type layer.
JP12182878A 1978-10-02 1978-10-02 Semiconductor device Granted JPS5548958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12182878A JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12182878A JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5548958A true JPS5548958A (en) 1980-04-08
JPS6146972B2 JPS6146972B2 (en) 1986-10-16

Family

ID=14820925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12182878A Granted JPS5548958A (en) 1978-10-02 1978-10-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5548958A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893291A (en) * 1981-11-30 1983-06-02 Fuji Electric Corp Res & Dev Ltd Diode for integrated circuit
JPS602557A (en) * 1983-03-01 1985-01-08 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド Device and method of intermittently forwarding sheet material
JPS6165060U (en) * 1984-10-05 1986-05-02
JPS62204357U (en) * 1986-06-18 1987-12-26
JPH02370A (en) * 1987-10-27 1990-01-05 Nec Corp Integrated circuit device
JP2008186920A (en) * 2007-01-29 2008-08-14 Mitsubishi Electric Corp Semiconductor device
JP2020007136A (en) * 2018-07-12 2020-01-16 本田技研工業株式会社 Cutting method of sheet body and its cutting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893291A (en) * 1981-11-30 1983-06-02 Fuji Electric Corp Res & Dev Ltd Diode for integrated circuit
JPH026226B2 (en) * 1981-11-30 1990-02-08 Fuji Denki Sogo Kenkyusho Kk
JPS602557A (en) * 1983-03-01 1985-01-08 ガ−バ−・サイエンテイフイツク・インコ−ポレ−テツド Device and method of intermittently forwarding sheet material
JPS6165060U (en) * 1984-10-05 1986-05-02
JPS62204357U (en) * 1986-06-18 1987-12-26
JPH02370A (en) * 1987-10-27 1990-01-05 Nec Corp Integrated circuit device
JP2008186920A (en) * 2007-01-29 2008-08-14 Mitsubishi Electric Corp Semiconductor device
JP2020007136A (en) * 2018-07-12 2020-01-16 本田技研工業株式会社 Cutting method of sheet body and its cutting device

Also Published As

Publication number Publication date
JPS6146972B2 (en) 1986-10-16

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