JPS54127687A - Planar-type reverse conducting thyristor - Google Patents

Planar-type reverse conducting thyristor

Info

Publication number
JPS54127687A
JPS54127687A JP3623178A JP3623178A JPS54127687A JP S54127687 A JPS54127687 A JP S54127687A JP 3623178 A JP3623178 A JP 3623178A JP 3623178 A JP3623178 A JP 3623178A JP S54127687 A JPS54127687 A JP S54127687A
Authority
JP
Japan
Prior art keywords
substrate
electrode layer
type diffusion
diffusion region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3623178A
Other languages
Japanese (ja)
Inventor
Kouzou Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3623178A priority Critical patent/JPS54127687A/en
Publication of JPS54127687A publication Critical patent/JPS54127687A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Abstract

PURPOSE:To obtain a thyristor which features a small amount of the gate current and the improved communication characteristics. CONSTITUTION:Pellet 9 contains thyristor part A, diode part B and intermediate isolation region C respectively. At part A, P-type diffusion region 11 and N-type diffusion region 12 are formed on N-type silicon substrate 10 along with electrode layer 13 and 14. And the silicon dioxide film 15 is formed on the interface between region 11 and 12 as well as on the surface of substrate 10. P-type diffusion region 16 is formed on the back of substrate 10, and furthermore common electrode layer 17 is formed. Electrode 13, 14 and 17 are metalized layers forming the low resistance contact. At part B, P-type diffusion region 18 and electrode layer 19 are formed on substrate 10. And at part C, the silicon dioxide film and electrode layer 17 are formed on both surfaces centering on substrate 10.
JP3623178A 1978-03-28 1978-03-28 Planar-type reverse conducting thyristor Pending JPS54127687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3623178A JPS54127687A (en) 1978-03-28 1978-03-28 Planar-type reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3623178A JPS54127687A (en) 1978-03-28 1978-03-28 Planar-type reverse conducting thyristor

Publications (1)

Publication Number Publication Date
JPS54127687A true JPS54127687A (en) 1979-10-03

Family

ID=12463988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3623178A Pending JPS54127687A (en) 1978-03-28 1978-03-28 Planar-type reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS54127687A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147276A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Reverse conductive type semiconductor switching device
JPS6074677A (en) * 1983-09-30 1985-04-26 Toshiba Corp Composite type thyristor
JPS6098671A (en) * 1983-11-02 1985-06-01 Toshiba Corp Composite thyristor
US6617661B2 (en) * 1997-08-16 2003-09-09 Robert Bosch Gmbh High voltage component and method for making same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57147276A (en) * 1981-03-06 1982-09-11 Hitachi Ltd Reverse conductive type semiconductor switching device
JPH0136270B2 (en) * 1981-03-06 1989-07-31 Hitachi Ltd
JPS6074677A (en) * 1983-09-30 1985-04-26 Toshiba Corp Composite type thyristor
JPS6098671A (en) * 1983-11-02 1985-06-01 Toshiba Corp Composite thyristor
US6617661B2 (en) * 1997-08-16 2003-09-09 Robert Bosch Gmbh High voltage component and method for making same

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