JPS57147276A - Reverse conductive type semiconductor switching device - Google Patents

Reverse conductive type semiconductor switching device

Info

Publication number
JPS57147276A
JPS57147276A JP3136181A JP3136181A JPS57147276A JP S57147276 A JPS57147276 A JP S57147276A JP 3136181 A JP3136181 A JP 3136181A JP 3136181 A JP3136181 A JP 3136181A JP S57147276 A JPS57147276 A JP S57147276A
Authority
JP
Japan
Prior art keywords
region
thyristor
depletion layer
type
switching device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3136181A
Other languages
Japanese (ja)
Other versions
JPH0136270B2 (en
Inventor
Susumu Murakami
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3136181A priority Critical patent/JPS57147276A/en
Publication of JPS57147276A publication Critical patent/JPS57147276A/en
Publication of JPH0136270B2 publication Critical patent/JPH0136270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent commutation failure of a switching device without sacrificing other characteristics by providing in parallel an static induction thyristor and a p-n diode in reverse conducting direction in the same semiconductor substrate and providing depletion layer conact inhibiting means therebetween. CONSTITUTION:An impurity which imparts p type is selectively diffused from both main surfaces of a silicon substrate to form a base region 1, and a gate region 6, an emitter region 4 and an anode region 2 are formed. Subsequently, an impurity which imparts n type is selectively diffused, and a cathode 3, an n<+> type region 13 and an emitter region 5 are formed. Then, a deposited film is selectively formed on both main surfaces, and electrodes 8-11 are foremd. Then, when an SI (static induction) thyristor region is in a forward blocking state, the region 13 operates so that the first depletion layer extending from the p-n junction between the gate region 6 and the base region 1 of the SI thyristor and the second depletion layer extending from the p-n juction between the emitter region 4 and the base region 1 of a diode are not contacted with each other. Accordingly, the SI thyristor is not fired erroneously by the the remaining carrier.
JP3136181A 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device Granted JPS57147276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3136181A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3136181A JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS57147276A true JPS57147276A (en) 1982-09-11
JPH0136270B2 JPH0136270B2 (en) 1989-07-31

Family

ID=12329095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3136181A Granted JPS57147276A (en) 1981-03-06 1981-03-06 Reverse conductive type semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS57147276A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (en) * 1983-09-30 1985-04-26 Toshiba Corp Composite type thyristor
JPS6098671A (en) * 1983-11-02 1985-06-01 Toshiba Corp Composite thyristor
JPS60143788U (en) * 1984-03-05 1985-09-24 株式会社豊田自動織機製作所 Auxiliary nozzle height adjustment device for fluid jet looms
JPH0445579A (en) * 1990-06-12 1992-02-14 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH0846178A (en) * 1994-07-27 1996-02-16 Toyo Electric Mfg Co Ltd Self-arc-extinguishing reeversely conducting thyristor
JPH08213591A (en) * 1995-01-31 1996-08-20 Toyo Electric Mfg Co Ltd Inverse conduction thyristor with buried gate structure or undercut gate structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04104067U (en) * 1991-02-15 1992-09-08 日信工業株式会社 Reservoir for master cylinder

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967U (en) * 1971-06-24 1973-02-13
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT283814B (en) * 1968-09-04 1970-08-25 Hildegard Dr Lorant Means for combating harmful vertebrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4812967U (en) * 1971-06-24 1973-02-13
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS54127687A (en) * 1978-03-28 1979-10-03 Mitsubishi Electric Corp Planar-type reverse conducting thyristor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074677A (en) * 1983-09-30 1985-04-26 Toshiba Corp Composite type thyristor
JPS6098671A (en) * 1983-11-02 1985-06-01 Toshiba Corp Composite thyristor
JPS60143788U (en) * 1984-03-05 1985-09-24 株式会社豊田自動織機製作所 Auxiliary nozzle height adjustment device for fluid jet looms
JPH0315577Y2 (en) * 1984-03-05 1991-04-04
JPH0445579A (en) * 1990-06-12 1992-02-14 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH0846178A (en) * 1994-07-27 1996-02-16 Toyo Electric Mfg Co Ltd Self-arc-extinguishing reeversely conducting thyristor
JPH08213591A (en) * 1995-01-31 1996-08-20 Toyo Electric Mfg Co Ltd Inverse conduction thyristor with buried gate structure or undercut gate structure

Also Published As

Publication number Publication date
JPH0136270B2 (en) 1989-07-31

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