JPS55162223A - Semiconductor device and its preparation - Google Patents

Semiconductor device and its preparation

Info

Publication number
JPS55162223A
JPS55162223A JP7089679A JP7089679A JPS55162223A JP S55162223 A JPS55162223 A JP S55162223A JP 7089679 A JP7089679 A JP 7089679A JP 7089679 A JP7089679 A JP 7089679A JP S55162223 A JPS55162223 A JP S55162223A
Authority
JP
Japan
Prior art keywords
type
layer
gaas
substrate
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7089679A
Other languages
Japanese (ja)
Inventor
Susumu Yoshida
Kotaro Mitsui
Takao Oda
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7089679A priority Critical patent/JPS55162223A/en
Publication of JPS55162223A publication Critical patent/JPS55162223A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Sustainable Development (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a solar battery having a high photoelectric conversion efficiency or an LED having a high emission efficiency and a high-speed response by providing an N-type (111) GaAs substrate with N-type GaAs epitaxial, P-type GaAs, and P- type GaAlAs layers. CONSTITUTION:An Si doped N-type GaAs liquid epitaxial layer 12 is grown on an N-type (111B) GaAs substrate 11. On this, a P-type GaAs layer 13 and P-type Ga1-xAlxAs layer 14, which are formed by diffusion, are provided. An Au-Ge electrode 15 as the N-type ohmic electrode of the substrate 11, and Au-Zn electrodes 16 as the P-type ohmic electrode of the layer 14 are provided, and an SiO deposition film 17 as a reflectionless film is formed on the layer 14. Thus, as a solar battery, its photoelectric conversion efficiency can be improved, and as an infrared LED, its emission output can be raised.
JP7089679A 1979-06-04 1979-06-04 Semiconductor device and its preparation Pending JPS55162223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7089679A JPS55162223A (en) 1979-06-04 1979-06-04 Semiconductor device and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7089679A JPS55162223A (en) 1979-06-04 1979-06-04 Semiconductor device and its preparation

Publications (1)

Publication Number Publication Date
JPS55162223A true JPS55162223A (en) 1980-12-17

Family

ID=13444746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7089679A Pending JPS55162223A (en) 1979-06-04 1979-06-04 Semiconductor device and its preparation

Country Status (1)

Country Link
JP (1) JPS55162223A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121830A (en) * 1982-12-27 1984-07-14 Mitsubishi Monsanto Chem Co Epitaxial wafer
JPS60200576A (en) * 1984-03-24 1985-10-11 Mitsubishi Electric Corp Gallium arsenide semiconductor device
JPH02251179A (en) * 1989-03-24 1990-10-08 Nichia Chem Ind Ltd Epitaxial wafer
JPH05326995A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121830A (en) * 1982-12-27 1984-07-14 Mitsubishi Monsanto Chem Co Epitaxial wafer
JPS60200576A (en) * 1984-03-24 1985-10-11 Mitsubishi Electric Corp Gallium arsenide semiconductor device
JPH02251179A (en) * 1989-03-24 1990-10-08 Nichia Chem Ind Ltd Epitaxial wafer
JPH05326995A (en) * 1992-05-20 1993-12-10 Hitachi Ltd Semiconductor device

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