JPS55162223A - Semiconductor device and its preparation - Google Patents
Semiconductor device and its preparationInfo
- Publication number
- JPS55162223A JPS55162223A JP7089679A JP7089679A JPS55162223A JP S55162223 A JPS55162223 A JP S55162223A JP 7089679 A JP7089679 A JP 7089679A JP 7089679 A JP7089679 A JP 7089679A JP S55162223 A JPS55162223 A JP S55162223A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- gaas
- substrate
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a solar battery having a high photoelectric conversion efficiency or an LED having a high emission efficiency and a high-speed response by providing an N-type (111) GaAs substrate with N-type GaAs epitaxial, P-type GaAs, and P- type GaAlAs layers. CONSTITUTION:An Si doped N-type GaAs liquid epitaxial layer 12 is grown on an N-type (111B) GaAs substrate 11. On this, a P-type GaAs layer 13 and P-type Ga1-xAlxAs layer 14, which are formed by diffusion, are provided. An Au-Ge electrode 15 as the N-type ohmic electrode of the substrate 11, and Au-Zn electrodes 16 as the P-type ohmic electrode of the layer 14 are provided, and an SiO deposition film 17 as a reflectionless film is formed on the layer 14. Thus, as a solar battery, its photoelectric conversion efficiency can be improved, and as an infrared LED, its emission output can be raised.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7089679A JPS55162223A (en) | 1979-06-04 | 1979-06-04 | Semiconductor device and its preparation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7089679A JPS55162223A (en) | 1979-06-04 | 1979-06-04 | Semiconductor device and its preparation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55162223A true JPS55162223A (en) | 1980-12-17 |
Family
ID=13444746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7089679A Pending JPS55162223A (en) | 1979-06-04 | 1979-06-04 | Semiconductor device and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55162223A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121830A (en) * | 1982-12-27 | 1984-07-14 | Mitsubishi Monsanto Chem Co | Epitaxial wafer |
JPS60200576A (en) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | Gallium arsenide semiconductor device |
JPH02251179A (en) * | 1989-03-24 | 1990-10-08 | Nichia Chem Ind Ltd | Epitaxial wafer |
JPH05326995A (en) * | 1992-05-20 | 1993-12-10 | Hitachi Ltd | Semiconductor device |
-
1979
- 1979-06-04 JP JP7089679A patent/JPS55162223A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59121830A (en) * | 1982-12-27 | 1984-07-14 | Mitsubishi Monsanto Chem Co | Epitaxial wafer |
JPS60200576A (en) * | 1984-03-24 | 1985-10-11 | Mitsubishi Electric Corp | Gallium arsenide semiconductor device |
JPH02251179A (en) * | 1989-03-24 | 1990-10-08 | Nichia Chem Ind Ltd | Epitaxial wafer |
JPH05326995A (en) * | 1992-05-20 | 1993-12-10 | Hitachi Ltd | Semiconductor device |
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