JPS54117692A - Semiconductor light emitting diode - Google Patents
Semiconductor light emitting diodeInfo
- Publication number
- JPS54117692A JPS54117692A JP2465278A JP2465278A JPS54117692A JP S54117692 A JPS54117692 A JP S54117692A JP 2465278 A JP2465278 A JP 2465278A JP 2465278 A JP2465278 A JP 2465278A JP S54117692 A JPS54117692 A JP S54117692A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- layer
- make
- luminous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make a pulse response characteristic good and make a current-light output characteristic linear by providing a high-resistance region or an etched groove around the part adjacent to a luminous regiona and forming a PN junction only in the luminous region.
CONSTITUTION: N-type AlxGa1-xAs layer 31, P-type or N-type GaAs layer 32 and P-type AlxGa1-xAs layer 33 are continuously laminated on an N-type GaAs substrate and are grown epitaxially. Next, P-type region 34 whose diffusion front approaches the part near layer 3 is formed at the center of top layer 33 by diffusion while being caused to agree with a prescribed light emission diameter, and region 32' of layer 32 which contacts with region 34 is used as a luminous region. After that, protons, etc., are irradiated to the region around regions 34 and 32' to make this region of high-resistance region 36, or a groove is provided in this region to make regions 34 and 32' independent of other regions. Next, N-type impurity is diffused around the outside of region 36 to convert region 33 and 32 to N-type region 35, and Au-Ge/Au- Ni electrode 37 is caused to adhere to region 35, and Ti-Au electrode 38 is caused to adhere onto region 34.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2465278A JPS54117692A (en) | 1978-03-03 | 1978-03-03 | Semiconductor light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2465278A JPS54117692A (en) | 1978-03-03 | 1978-03-03 | Semiconductor light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54117692A true JPS54117692A (en) | 1979-09-12 |
Family
ID=12144062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2465278A Pending JPS54117692A (en) | 1978-03-03 | 1978-03-03 | Semiconductor light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54117692A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5791576A (en) * | 1980-10-06 | 1982-06-07 | Philips Nv | Semiconductor device |
US5291037A (en) * | 1992-03-04 | 1994-03-01 | Eastman Kodak Company | Light-emitting device |
-
1978
- 1978-03-03 JP JP2465278A patent/JPS54117692A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5791576A (en) * | 1980-10-06 | 1982-06-07 | Philips Nv | Semiconductor device |
US5291037A (en) * | 1992-03-04 | 1994-03-01 | Eastman Kodak Company | Light-emitting device |
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