JPS54117692A - Semiconductor light emitting diode - Google Patents

Semiconductor light emitting diode

Info

Publication number
JPS54117692A
JPS54117692A JP2465278A JP2465278A JPS54117692A JP S54117692 A JPS54117692 A JP S54117692A JP 2465278 A JP2465278 A JP 2465278A JP 2465278 A JP2465278 A JP 2465278A JP S54117692 A JPS54117692 A JP S54117692A
Authority
JP
Japan
Prior art keywords
region
type
layer
make
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2465278A
Other languages
Japanese (ja)
Inventor
Kentarou Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2465278A priority Critical patent/JPS54117692A/en
Publication of JPS54117692A publication Critical patent/JPS54117692A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make a pulse response characteristic good and make a current-light output characteristic linear by providing a high-resistance region or an etched groove around the part adjacent to a luminous regiona and forming a PN junction only in the luminous region.
CONSTITUTION: N-type AlxGa1-xAs layer 31, P-type or N-type GaAs layer 32 and P-type AlxGa1-xAs layer 33 are continuously laminated on an N-type GaAs substrate and are grown epitaxially. Next, P-type region 34 whose diffusion front approaches the part near layer 3 is formed at the center of top layer 33 by diffusion while being caused to agree with a prescribed light emission diameter, and region 32' of layer 32 which contacts with region 34 is used as a luminous region. After that, protons, etc., are irradiated to the region around regions 34 and 32' to make this region of high-resistance region 36, or a groove is provided in this region to make regions 34 and 32' independent of other regions. Next, N-type impurity is diffused around the outside of region 36 to convert region 33 and 32 to N-type region 35, and Au-Ge/Au- Ni electrode 37 is caused to adhere to region 35, and Ti-Au electrode 38 is caused to adhere onto region 34.
COPYRIGHT: (C)1979,JPO&Japio
JP2465278A 1978-03-03 1978-03-03 Semiconductor light emitting diode Pending JPS54117692A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2465278A JPS54117692A (en) 1978-03-03 1978-03-03 Semiconductor light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2465278A JPS54117692A (en) 1978-03-03 1978-03-03 Semiconductor light emitting diode

Publications (1)

Publication Number Publication Date
JPS54117692A true JPS54117692A (en) 1979-09-12

Family

ID=12144062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2465278A Pending JPS54117692A (en) 1978-03-03 1978-03-03 Semiconductor light emitting diode

Country Status (1)

Country Link
JP (1) JPS54117692A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791576A (en) * 1980-10-06 1982-06-07 Philips Nv Semiconductor device
US5291037A (en) * 1992-03-04 1994-03-01 Eastman Kodak Company Light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791576A (en) * 1980-10-06 1982-06-07 Philips Nv Semiconductor device
US5291037A (en) * 1992-03-04 1994-03-01 Eastman Kodak Company Light-emitting device

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