JPS57193080A - Plane light emission type high intensity light emitting diode - Google Patents
Plane light emission type high intensity light emitting diodeInfo
- Publication number
- JPS57193080A JPS57193080A JP7757081A JP7757081A JPS57193080A JP S57193080 A JPS57193080 A JP S57193080A JP 7757081 A JP7757081 A JP 7757081A JP 7757081 A JP7757081 A JP 7757081A JP S57193080 A JPS57193080 A JP S57193080A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- light emitting
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 238000010521 absorption reaction Methods 0.000 abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain an etched well type light emitting diode of high intensity for producing a light from a hole formed at a substrate by selectively injecting a current on a double hetero epitaxial layer by forming a window layer having an absorption end at the side of a short wavelength side from a light emitting wavelength adjacent to the clad layer of a hetero structure. CONSTITUTION:An N-type AlxGa1-xAs layer 210 becoming a window layer is epitaxially grown in liquid phase on an N-type GaAs substrate 100. At this time, the layer 210 has 0.4 of aluminum composition (x) at the side of the substrate 100 and 0.15 at the end so as not to absorb the light of 850nm, providing an absorption end at the side of short wavelength from the light emitting wavelength. Then, to sufficiently enclose the injection carrier on the layer, an N-type AlxGa1-xAs clad layer 220 of 0.3 of Al composition ratio(x), P-type AlyGa1-yAs active layer 120, a P-type AlxGa1-xAs clad layer 130, and N-type AlyGa1-yAs layer 140 are laminated and grown, are etched from the side of the substrate 100, and a light pickup surface 260 of the layer 210 is exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757081A JPS57193080A (en) | 1981-05-22 | 1981-05-22 | Plane light emission type high intensity light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757081A JPS57193080A (en) | 1981-05-22 | 1981-05-22 | Plane light emission type high intensity light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57193080A true JPS57193080A (en) | 1982-11-27 |
Family
ID=13637666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7757081A Pending JPS57193080A (en) | 1981-05-22 | 1981-05-22 | Plane light emission type high intensity light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57193080A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017969A (en) * | 1983-07-12 | 1985-01-29 | Matsushita Electric Ind Co Ltd | Light emitting semiconductor device |
| JPS6428971A (en) * | 1987-07-24 | 1989-01-31 | Sharp Kk | Gaalas infrared light emitting diode |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5640287A (en) * | 1979-09-11 | 1981-04-16 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device |
-
1981
- 1981-05-22 JP JP7757081A patent/JPS57193080A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5640287A (en) * | 1979-09-11 | 1981-04-16 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6017969A (en) * | 1983-07-12 | 1985-01-29 | Matsushita Electric Ind Co Ltd | Light emitting semiconductor device |
| JPS6428971A (en) * | 1987-07-24 | 1989-01-31 | Sharp Kk | Gaalas infrared light emitting diode |
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