JPS5779683A - Narrow spectrum type light emitting diode - Google Patents

Narrow spectrum type light emitting diode

Info

Publication number
JPS5779683A
JPS5779683A JP15535280A JP15535280A JPS5779683A JP S5779683 A JPS5779683 A JP S5779683A JP 15535280 A JP15535280 A JP 15535280A JP 15535280 A JP15535280 A JP 15535280A JP S5779683 A JPS5779683 A JP S5779683A
Authority
JP
Japan
Prior art keywords
layer
luminous
light emitting
emitting diode
narrow spectrum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15535280A
Other languages
Japanese (ja)
Inventor
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15535280A priority Critical patent/JPS5779683A/en
Publication of JPS5779683A publication Critical patent/JPS5779683A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To obtain narrow spectrum luminescence by providing a photoabsorbing layer with a specific wavelength between a current injection-type luminous section and a luminous section window. CONSTITUTION:A luminous layer 12, a carrier enclosing layer 13, and a photoabsorbing layer 14 are consecutively formed on a conductive N type IrP substrate 11 by epitaxial growth and a P side electrode 16 and an N side electrode 17 are formed on the opposite surfaces. The electrode 16 is provided with a luminous section window 16a taking out light to outside from a luminous region 12a to form a Zn diffusion region 15 reaching the layer 13 from the surface of the layer 14 so that effective current injection to the region 12a may be obtained. The layer 14 is provided with a shorter absorbing end wavelength than the shortest luminous wavelength of light emitting diode.
JP15535280A 1980-11-05 1980-11-05 Narrow spectrum type light emitting diode Pending JPS5779683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15535280A JPS5779683A (en) 1980-11-05 1980-11-05 Narrow spectrum type light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15535280A JPS5779683A (en) 1980-11-05 1980-11-05 Narrow spectrum type light emitting diode

Publications (1)

Publication Number Publication Date
JPS5779683A true JPS5779683A (en) 1982-05-18

Family

ID=15604014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15535280A Pending JPS5779683A (en) 1980-11-05 1980-11-05 Narrow spectrum type light emitting diode

Country Status (1)

Country Link
JP (1) JPS5779683A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130327A (en) * 1994-11-02 1996-05-21 Nichia Chem Ind Ltd III-V group nitride semiconductor light emitting device
WO2004030111A3 (en) * 2002-09-27 2005-01-13 Sarnoff Corp Narrow spectral width light emitting diode
JP2006108350A (en) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd Semiconductor light emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130327A (en) * 1994-11-02 1996-05-21 Nichia Chem Ind Ltd III-V group nitride semiconductor light emitting device
WO2004030111A3 (en) * 2002-09-27 2005-01-13 Sarnoff Corp Narrow spectral width light emitting diode
JP2006108350A (en) * 2004-10-05 2006-04-20 Stanley Electric Co Ltd Semiconductor light emitting device
US7880187B2 (en) 2004-10-05 2011-02-01 Stanley Electric Co., Ltd. Semiconductor light emitting device having narrow radiation spectrum
DE102005046417B4 (en) * 2004-10-05 2020-03-26 Stanley Electric Co. Ltd. Semiconductor light emitting device with a narrow radiation spectrum

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