JPS5595386A - Manufacture of semiconductor light emitting device - Google Patents
Manufacture of semiconductor light emitting deviceInfo
- Publication number
- JPS5595386A JPS5595386A JP15355878A JP15355878A JPS5595386A JP S5595386 A JPS5595386 A JP S5595386A JP 15355878 A JP15355878 A JP 15355878A JP 15355878 A JP15355878 A JP 15355878A JP S5595386 A JPS5595386 A JP S5595386A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- region
- type inp
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a light emitting region of a narrow width and stabilize the lateral mode oscillation by a method wherein the center part of the loss region constituting a light emitting device of a double hetero-junction stripe structure is removed by etching, and while this place is being filled, a waveguide layer is formed on it.
CONSTITUTION: An n-type InP clad layer 2, In0.76Ga0.24As0.55P0.45 active layer 3, p-type InP clad layer 4, n-type In0.76Ga0.24As0.55P0.45 loss layer 5 are grown epitaxially in liquid phase on n-type InP substrate 1 having face (100). Next, p-type region 9 is diffused into the center of layer 5. By selective etching, a depression is formed in layer 9. Subsequently, while this depression is being filled, p-type InP waveguide layer 6 is grown epitaxially on the entire surface. Then, Au-Zn electrode 7 is fitted on the front side, and also Au-Zn electrode 8 is fitted on the back side. By this, layer 9 functions as a current blocking region, a light emitting region of a narrow width is obtained, and the lateral mode becomes a single basic mode.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15355878A JPS5595386A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15355878A JPS5595386A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5595386A true JPS5595386A (en) | 1980-07-19 |
JPS5636594B2 JPS5636594B2 (en) | 1981-08-25 |
Family
ID=15565116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15355878A Granted JPS5595386A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5595386A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61280694A (en) * | 1985-06-05 | 1986-12-11 | Nec Corp | Semiconductor light emission element |
-
1978
- 1978-12-11 JP JP15355878A patent/JPS5595386A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61280694A (en) * | 1985-06-05 | 1986-12-11 | Nec Corp | Semiconductor light emission element |
Also Published As
Publication number | Publication date |
---|---|
JPS5636594B2 (en) | 1981-08-25 |
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