JPS5595386A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5595386A
JPS5595386A JP15355878A JP15355878A JPS5595386A JP S5595386 A JPS5595386 A JP S5595386A JP 15355878 A JP15355878 A JP 15355878A JP 15355878 A JP15355878 A JP 15355878A JP S5595386 A JPS5595386 A JP S5595386A
Authority
JP
Japan
Prior art keywords
layer
light emitting
region
type inp
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15355878A
Other languages
Japanese (ja)
Other versions
JPS5636594B2 (en
Inventor
Hiroshi Nishi
Mitsuhiro Yano
Tsugio Kumai
Kimito Takusagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15355878A priority Critical patent/JPS5595386A/en
Publication of JPS5595386A publication Critical patent/JPS5595386A/en
Publication of JPS5636594B2 publication Critical patent/JPS5636594B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a light emitting region of a narrow width and stabilize the lateral mode oscillation by a method wherein the center part of the loss region constituting a light emitting device of a double hetero-junction stripe structure is removed by etching, and while this place is being filled, a waveguide layer is formed on it.
CONSTITUTION: An n-type InP clad layer 2, In0.76Ga0.24As0.55P0.45 active layer 3, p-type InP clad layer 4, n-type In0.76Ga0.24As0.55P0.45 loss layer 5 are grown epitaxially in liquid phase on n-type InP substrate 1 having face (100). Next, p-type region 9 is diffused into the center of layer 5. By selective etching, a depression is formed in layer 9. Subsequently, while this depression is being filled, p-type InP waveguide layer 6 is grown epitaxially on the entire surface. Then, Au-Zn electrode 7 is fitted on the front side, and also Au-Zn electrode 8 is fitted on the back side. By this, layer 9 functions as a current blocking region, a light emitting region of a narrow width is obtained, and the lateral mode becomes a single basic mode.
COPYRIGHT: (C)1980,JPO&Japio
JP15355878A 1978-12-11 1978-12-11 Manufacture of semiconductor light emitting device Granted JPS5595386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15355878A JPS5595386A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15355878A JPS5595386A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor light emitting device

Publications (2)

Publication Number Publication Date
JPS5595386A true JPS5595386A (en) 1980-07-19
JPS5636594B2 JPS5636594B2 (en) 1981-08-25

Family

ID=15565116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15355878A Granted JPS5595386A (en) 1978-12-11 1978-12-11 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5595386A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280694A (en) * 1985-06-05 1986-12-11 Nec Corp Semiconductor light emission element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280694A (en) * 1985-06-05 1986-12-11 Nec Corp Semiconductor light emission element

Also Published As

Publication number Publication date
JPS5636594B2 (en) 1981-08-25

Similar Documents

Publication Publication Date Title
JPS54115088A (en) Double hetero junction laser element of stripe type
JPS5640292A (en) Semiconductor laser
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
JPS55158691A (en) Semiconductor light emitting device manufacture thereof
JPS55121693A (en) Manufacture of band-like semiconductor laser by selective melt-back process
JPS5493380A (en) Semiconductor light emitting device
JPS5595386A (en) Manufacture of semiconductor light emitting device
JPS575384A (en) Semiconductor laser device
JPS57207388A (en) Manufacture of semiconductor laser
JPS54107284A (en) Semiconductor junction laser and its production
JPS5451491A (en) Semiconductor laser
JPS5618484A (en) Manufacture of semiconductor laser
JPS5676588A (en) Manufacture of semiconductor laser
JPS55125690A (en) Semiconductor laser
JPS5595387A (en) Semiconductor light emitting device
JPS5580386A (en) Manufacture of semiconductor light emitting device
JPS5688390A (en) Manufacture of semiconductor laser
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS54127692A (en) Semiconductor laser device
JPS54159891A (en) Semiconductor laser device and its production
JPS54115087A (en) Double hetero junction laser of stripe type
JPS56169384A (en) Manufacture of semiconductor laser
JPS56169385A (en) Manufacture of semiconductor laser
JPS55125691A (en) Distributed feedback type semiconductor laser