JPS54107284A - Semiconductor junction laser and its production - Google Patents
Semiconductor junction laser and its productionInfo
- Publication number
- JPS54107284A JPS54107284A JP1424778A JP1424778A JPS54107284A JP S54107284 A JPS54107284 A JP S54107284A JP 1424778 A JP1424778 A JP 1424778A JP 1424778 A JP1424778 A JP 1424778A JP S54107284 A JPS54107284 A JP S54107284A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor junction
- layer
- junction laser
- stripe
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a semiconductor junction laser where reliability is high and fundamental-mode oscillation is possible.
CONSTITUTION: A surface in steps parallel to the [01∼1] direction is formed on n- type GaAs substrate 13, and continuously, n-GaAlAs layer 14, GaAs-active layer 15, p-GaAlAs layer 16 and p-GaAs 17 are grown continuously. Next, SiO2 film 18 is fitted to layer 17, and stripe-shaped windows are provided by selective etching for the purpose of forming stripe-shaped current region 20. At this time, these windows are so provided that they may extend in parallel just above active layer 24. Then, electrodes 19 and 12 are evaporated, and a stripe electrode is fitted, thereby making a semiconductor junction laser.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1424778A JPS54107284A (en) | 1978-02-10 | 1978-02-10 | Semiconductor junction laser and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1424778A JPS54107284A (en) | 1978-02-10 | 1978-02-10 | Semiconductor junction laser and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54107284A true JPS54107284A (en) | 1979-08-22 |
Family
ID=11855750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1424778A Pending JPS54107284A (en) | 1978-02-10 | 1978-02-10 | Semiconductor junction laser and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54107284A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116349U (en) * | 1980-02-04 | 1981-09-05 | ||
JPS56120921U (en) * | 1980-02-18 | 1981-09-14 | ||
US4360920A (en) * | 1979-09-18 | 1982-11-23 | Matsushita Electric Industrial Co., Ltd. | Terraced substrate semiconductor laser |
US4456999A (en) * | 1980-06-13 | 1984-06-26 | Matsushita Electric Industrial Co., Ltd. | Terrace-shaped substrate semiconductor laser |
JPS6336590A (en) * | 1986-07-31 | 1988-02-17 | Sony Corp | Double heterojunction type semiconductor laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51114887A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS5299792A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Production of semiconductor light emitting device |
-
1978
- 1978-02-10 JP JP1424778A patent/JPS54107284A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51114887A (en) * | 1975-04-01 | 1976-10-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS5299792A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Production of semiconductor light emitting device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4360920A (en) * | 1979-09-18 | 1982-11-23 | Matsushita Electric Industrial Co., Ltd. | Terraced substrate semiconductor laser |
JPS56116349U (en) * | 1980-02-04 | 1981-09-05 | ||
JPS56120921U (en) * | 1980-02-18 | 1981-09-14 | ||
US4456999A (en) * | 1980-06-13 | 1984-06-26 | Matsushita Electric Industrial Co., Ltd. | Terrace-shaped substrate semiconductor laser |
JPS6336590A (en) * | 1986-07-31 | 1988-02-17 | Sony Corp | Double heterojunction type semiconductor laser |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5681994A (en) | Field effect type semiconductor laser and manufacture thereof | |
JPS5796583A (en) | Semiconductor laser with plurality of light source | |
JPS54107284A (en) | Semiconductor junction laser and its production | |
JPS55158691A (en) | Semiconductor light emitting device manufacture thereof | |
JPS55121693A (en) | Manufacture of band-like semiconductor laser by selective melt-back process | |
JPS5766685A (en) | Rib structure semiconductor laser | |
JPS5743428A (en) | Mesa etching method | |
JPS6459983A (en) | Manufacture of semiconductor laser | |
JPS57162382A (en) | Semiconductor laser | |
JPS5451491A (en) | Semiconductor laser | |
JPS54107281A (en) | Semiconductor laser device | |
JPS5643791A (en) | Semiconductor laser and method of producing thereof | |
JPS5474686A (en) | Visible semiconductor laser and its manufacture | |
JPS59108386A (en) | Semiconductor light emtting device | |
JPS57130489A (en) | Semiconductor light emitting device | |
JPS5595386A (en) | Manufacture of semiconductor light emitting device | |
JPS54107286A (en) | Production of semiconductor junction laser element | |
JPS54126489A (en) | Stripe structure of semiconductor laser element | |
JPS5456385A (en) | Wavelength variable distribution feedback type semiconductor laser device | |
JPS5519886A (en) | Apparatus and manufacturing method of semiconductor laser | |
JPS57155791A (en) | Semiconductor laser | |
JPS54125990A (en) | Stripe structure of semiconductor laser element | |
JPS57139986A (en) | Manufacure of semiconductor laser | |
JPS57155792A (en) | Semiconductor laser | |
JPS54107283A (en) | Formation method of reflection face of semiconductor laser crystal |