JPS54107284A - Semiconductor junction laser and its production - Google Patents

Semiconductor junction laser and its production

Info

Publication number
JPS54107284A
JPS54107284A JP1424778A JP1424778A JPS54107284A JP S54107284 A JPS54107284 A JP S54107284A JP 1424778 A JP1424778 A JP 1424778A JP 1424778 A JP1424778 A JP 1424778A JP S54107284 A JPS54107284 A JP S54107284A
Authority
JP
Japan
Prior art keywords
semiconductor junction
layer
junction laser
stripe
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1424778A
Other languages
Japanese (ja)
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1424778A priority Critical patent/JPS54107284A/en
Publication of JPS54107284A publication Critical patent/JPS54107284A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a semiconductor junction laser where reliability is high and fundamental-mode oscillation is possible.
CONSTITUTION: A surface in steps parallel to the [01∼1] direction is formed on n- type GaAs substrate 13, and continuously, n-GaAlAs layer 14, GaAs-active layer 15, p-GaAlAs layer 16 and p-GaAs 17 are grown continuously. Next, SiO2 film 18 is fitted to layer 17, and stripe-shaped windows are provided by selective etching for the purpose of forming stripe-shaped current region 20. At this time, these windows are so provided that they may extend in parallel just above active layer 24. Then, electrodes 19 and 12 are evaporated, and a stripe electrode is fitted, thereby making a semiconductor junction laser.
COPYRIGHT: (C)1979,JPO&Japio
JP1424778A 1978-02-10 1978-02-10 Semiconductor junction laser and its production Pending JPS54107284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1424778A JPS54107284A (en) 1978-02-10 1978-02-10 Semiconductor junction laser and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1424778A JPS54107284A (en) 1978-02-10 1978-02-10 Semiconductor junction laser and its production

Publications (1)

Publication Number Publication Date
JPS54107284A true JPS54107284A (en) 1979-08-22

Family

ID=11855750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1424778A Pending JPS54107284A (en) 1978-02-10 1978-02-10 Semiconductor junction laser and its production

Country Status (1)

Country Link
JP (1) JPS54107284A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116349U (en) * 1980-02-04 1981-09-05
JPS56120921U (en) * 1980-02-18 1981-09-14
US4360920A (en) * 1979-09-18 1982-11-23 Matsushita Electric Industrial Co., Ltd. Terraced substrate semiconductor laser
US4456999A (en) * 1980-06-13 1984-06-26 Matsushita Electric Industrial Co., Ltd. Terrace-shaped substrate semiconductor laser
JPS6336590A (en) * 1986-07-31 1988-02-17 Sony Corp Double heterojunction type semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360920A (en) * 1979-09-18 1982-11-23 Matsushita Electric Industrial Co., Ltd. Terraced substrate semiconductor laser
JPS56116349U (en) * 1980-02-04 1981-09-05
JPS56120921U (en) * 1980-02-18 1981-09-14
US4456999A (en) * 1980-06-13 1984-06-26 Matsushita Electric Industrial Co., Ltd. Terrace-shaped substrate semiconductor laser
JPS6336590A (en) * 1986-07-31 1988-02-17 Sony Corp Double heterojunction type semiconductor laser

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