JPS55121693A - Manufacture of band-like semiconductor laser by selective melt-back process - Google Patents

Manufacture of band-like semiconductor laser by selective melt-back process

Info

Publication number
JPS55121693A
JPS55121693A JP2931779A JP2931779A JPS55121693A JP S55121693 A JPS55121693 A JP S55121693A JP 2931779 A JP2931779 A JP 2931779A JP 2931779 A JP2931779 A JP 2931779A JP S55121693 A JPS55121693 A JP S55121693A
Authority
JP
Japan
Prior art keywords
layer
type
laser
inp layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2931779A
Other languages
Japanese (ja)
Other versions
JPS5722427B2 (en
Inventor
Yasuharu Suematsu
Shigehisa Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Original Assignee
TOKYO KOGYO DAIGAKUCHO
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO KOGYO DAIGAKUCHO, Tokyo Institute of Technology NUC filed Critical TOKYO KOGYO DAIGAKUCHO
Priority to JP2931779A priority Critical patent/JPS55121693A/en
Publication of JPS55121693A publication Critical patent/JPS55121693A/en
Publication of JPS5722427B2 publication Critical patent/JPS5722427B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate the affection of gas etching to a band-like semiconductor laser by forming an InP layer forming the side wall of a striped recess of n-type and p-type conducting layers and enclosing a laser active region with a current limiting region formed with the layers and a substrate.
CONSTITUTION: A GayIn1-yAsxP1-x layer 34 and an InP layer 35 are formed on an n-type InP layer 33 of a substrate 32. Then, an n-type InP layer 39, a GauIn1-uAsv P1-v layer 40, a p-type InP layer 14 and an n-type GasIn1-sAstP1-t layer 42 are sequentially grown in crystal to form a laser active region in the striped groove of the substrate so as to form a laser element. A photoresist or glass 43 is formed at the laser element, a striped groove 44 is formed thereat, a p-type impurity is diffused in the portion of the layer 42 thus exposed to form a high density impurity region 45, and electrodes 46, 47 are formed finally on both surfaces of the laser element to form a planar stripe laser.
COPYRIGHT: (C)1980,JPO&Japio
JP2931779A 1979-03-15 1979-03-15 Manufacture of band-like semiconductor laser by selective melt-back process Granted JPS55121693A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2931779A JPS55121693A (en) 1979-03-15 1979-03-15 Manufacture of band-like semiconductor laser by selective melt-back process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2931779A JPS55121693A (en) 1979-03-15 1979-03-15 Manufacture of band-like semiconductor laser by selective melt-back process

Publications (2)

Publication Number Publication Date
JPS55121693A true JPS55121693A (en) 1980-09-18
JPS5722427B2 JPS5722427B2 (en) 1982-05-13

Family

ID=12272835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2931779A Granted JPS55121693A (en) 1979-03-15 1979-03-15 Manufacture of band-like semiconductor laser by selective melt-back process

Country Status (1)

Country Link
JP (1) JPS55121693A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158496A (en) * 1980-05-09 1981-12-07 Mitsubishi Electric Corp Manufacture of injection type laser
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5763884A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor light-emitting device
JPS57181186A (en) * 1981-05-01 1982-11-08 Fujitsu Ltd Semiconductor light emission device
JPS57184277A (en) * 1981-05-08 1982-11-12 Fujitsu Ltd Manufacture of semiconductor light emission device
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS61259591A (en) * 1985-05-14 1986-11-17 Fujikura Ltd Manufacture of buried semiconductor laser
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same
JP2014011348A (en) * 2012-06-29 2014-01-20 Sumitomo Electric Device Innovations Inc Method of manufacturing semiconductor laser and method of manufacturing semiconductor element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214116B2 (en) * 1980-05-09 1987-03-31 Mitsubishi Electric Corp
JPS56158496A (en) * 1980-05-09 1981-12-07 Mitsubishi Electric Corp Manufacture of injection type laser
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5763884A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor light-emitting device
JPS6237900B2 (en) * 1980-10-06 1987-08-14 Mitsubishi Electric Corp
JPS6322478B2 (en) * 1981-05-01 1988-05-12 Fujitsu Ltd
JPS57181186A (en) * 1981-05-01 1982-11-08 Fujitsu Ltd Semiconductor light emission device
JPS57184277A (en) * 1981-05-08 1982-11-12 Fujitsu Ltd Manufacture of semiconductor light emission device
JPS6342872B2 (en) * 1981-05-08 1988-08-25 Fujitsu Ltd
JPS58114473A (en) * 1981-12-26 1983-07-07 Fujitsu Ltd Semiconductor light emitting device
JPS61259591A (en) * 1985-05-14 1986-11-17 Fujikura Ltd Manufacture of buried semiconductor laser
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same
JP2014011348A (en) * 2012-06-29 2014-01-20 Sumitomo Electric Device Innovations Inc Method of manufacturing semiconductor laser and method of manufacturing semiconductor element

Also Published As

Publication number Publication date
JPS5722427B2 (en) 1982-05-13

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