JPS55121693A - Manufacture of band-like semiconductor laser by selective melt-back process - Google Patents
Manufacture of band-like semiconductor laser by selective melt-back processInfo
- Publication number
- JPS55121693A JPS55121693A JP2931779A JP2931779A JPS55121693A JP S55121693 A JPS55121693 A JP S55121693A JP 2931779 A JP2931779 A JP 2931779A JP 2931779 A JP2931779 A JP 2931779A JP S55121693 A JPS55121693 A JP S55121693A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- laser
- inp layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To eliminate the affection of gas etching to a band-like semiconductor laser by forming an InP layer forming the side wall of a striped recess of n-type and p-type conducting layers and enclosing a laser active region with a current limiting region formed with the layers and a substrate.
CONSTITUTION: A GayIn1-yAsxP1-x layer 34 and an InP layer 35 are formed on an n-type InP layer 33 of a substrate 32. Then, an n-type InP layer 39, a GauIn1-uAsv P1-v layer 40, a p-type InP layer 14 and an n-type GasIn1-sAstP1-t layer 42 are sequentially grown in crystal to form a laser active region in the striped groove of the substrate so as to form a laser element. A photoresist or glass 43 is formed at the laser element, a striped groove 44 is formed thereat, a p-type impurity is diffused in the portion of the layer 42 thus exposed to form a high density impurity region 45, and electrodes 46, 47 are formed finally on both surfaces of the laser element to form a planar stripe laser.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931779A JPS55121693A (en) | 1979-03-15 | 1979-03-15 | Manufacture of band-like semiconductor laser by selective melt-back process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931779A JPS55121693A (en) | 1979-03-15 | 1979-03-15 | Manufacture of band-like semiconductor laser by selective melt-back process |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55121693A true JPS55121693A (en) | 1980-09-18 |
JPS5722427B2 JPS5722427B2 (en) | 1982-05-13 |
Family
ID=12272835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2931779A Granted JPS55121693A (en) | 1979-03-15 | 1979-03-15 | Manufacture of band-like semiconductor laser by selective melt-back process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55121693A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56158496A (en) * | 1980-05-09 | 1981-12-07 | Mitsubishi Electric Corp | Manufacture of injection type laser |
JPS5763885A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor laser device |
JPS5763884A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor light-emitting device |
JPS57181186A (en) * | 1981-05-01 | 1982-11-08 | Fujitsu Ltd | Semiconductor light emission device |
JPS57184277A (en) * | 1981-05-08 | 1982-11-12 | Fujitsu Ltd | Manufacture of semiconductor light emission device |
JPS58114473A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Semiconductor light emitting device |
JPS61259591A (en) * | 1985-05-14 | 1986-11-17 | Fujikura Ltd | Manufacture of buried semiconductor laser |
WO1990003055A1 (en) * | 1988-09-01 | 1990-03-22 | Seiko Epson Corporation | Light emitting device and method of producing the same |
JP2014011348A (en) * | 2012-06-29 | 2014-01-20 | Sumitomo Electric Device Innovations Inc | Method of manufacturing semiconductor laser and method of manufacturing semiconductor element |
-
1979
- 1979-03-15 JP JP2931779A patent/JPS55121693A/en active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214116B2 (en) * | 1980-05-09 | 1987-03-31 | Mitsubishi Electric Corp | |
JPS56158496A (en) * | 1980-05-09 | 1981-12-07 | Mitsubishi Electric Corp | Manufacture of injection type laser |
JPS5763885A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor laser device |
JPS5763884A (en) * | 1980-10-06 | 1982-04-17 | Mitsubishi Electric Corp | Semiconductor light-emitting device |
JPS6237900B2 (en) * | 1980-10-06 | 1987-08-14 | Mitsubishi Electric Corp | |
JPS6322478B2 (en) * | 1981-05-01 | 1988-05-12 | Fujitsu Ltd | |
JPS57181186A (en) * | 1981-05-01 | 1982-11-08 | Fujitsu Ltd | Semiconductor light emission device |
JPS57184277A (en) * | 1981-05-08 | 1982-11-12 | Fujitsu Ltd | Manufacture of semiconductor light emission device |
JPS6342872B2 (en) * | 1981-05-08 | 1988-08-25 | Fujitsu Ltd | |
JPS58114473A (en) * | 1981-12-26 | 1983-07-07 | Fujitsu Ltd | Semiconductor light emitting device |
JPS61259591A (en) * | 1985-05-14 | 1986-11-17 | Fujikura Ltd | Manufacture of buried semiconductor laser |
WO1990003055A1 (en) * | 1988-09-01 | 1990-03-22 | Seiko Epson Corporation | Light emitting device and method of producing the same |
JP2014011348A (en) * | 2012-06-29 | 2014-01-20 | Sumitomo Electric Device Innovations Inc | Method of manufacturing semiconductor laser and method of manufacturing semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
JPS5722427B2 (en) | 1982-05-13 |
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