JPS54125990A - Stripe structure of semiconductor laser element - Google Patents

Stripe structure of semiconductor laser element

Info

Publication number
JPS54125990A
JPS54125990A JP3443078A JP3443078A JPS54125990A JP S54125990 A JPS54125990 A JP S54125990A JP 3443078 A JP3443078 A JP 3443078A JP 3443078 A JP3443078 A JP 3443078A JP S54125990 A JPS54125990 A JP S54125990A
Authority
JP
Japan
Prior art keywords
layer
diffusion
given
region
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3443078A
Other languages
Japanese (ja)
Inventor
Akira Komuro
Morichika Yano
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3443078A priority Critical patent/JPS54125990A/en
Publication of JPS54125990A publication Critical patent/JPS54125990A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To reduce the stripe width and thus to reduce occurrence of the strain, defect and other negative factors by introducing the diffusion technique to the mesa- type stripe structure.
CONSTITUTION: The n-Ga1-XAlXAs layer 2, n-GaSa layer 3, p-Ga1-XAlXAs layer 4 and p-GaAs layer 5 are laminated in that order onto n-GaAs substrate 1. The mesa-type etching is given to both ends n-GaAs substrate 1. The mesa-type etching is given to both ends of layer 5, and the accumulation layer of stripe type is formed on layer 4. Then Zn is diffused from the surface of layer 4 to form Zn diffusion layer 13. The diffusion front of Zn is stopped inside layer 5 for the region to which the diffusion is given from the surface of layer 5, and reaches inside of layer 2 for the region to which the diffusion is given from the surface of layer 4 respectively. And the current flows with the region of layer 3 where no Zn diffusion is given used as the passage owing to the difference of the energy barrier to the electron. Thus, the current path is limited within the active layer, obtaining an extremely narrowed laser oscillation region.
COPYRIGHT: (C)1979,JPO&Japio
JP3443078A 1978-03-23 1978-03-23 Stripe structure of semiconductor laser element Pending JPS54125990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3443078A JPS54125990A (en) 1978-03-23 1978-03-23 Stripe structure of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3443078A JPS54125990A (en) 1978-03-23 1978-03-23 Stripe structure of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS54125990A true JPS54125990A (en) 1979-09-29

Family

ID=12413990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3443078A Pending JPS54125990A (en) 1978-03-23 1978-03-23 Stripe structure of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS54125990A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394423A (en) * 1993-01-26 1995-02-28 Nec Corporation Surface emitting semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5394423A (en) * 1993-01-26 1995-02-28 Nec Corporation Surface emitting semiconductor laser

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