JPS52106282A - Semiconductor laser unit - Google Patents
Semiconductor laser unitInfo
- Publication number
- JPS52106282A JPS52106282A JP2222876A JP2222876A JPS52106282A JP S52106282 A JPS52106282 A JP S52106282A JP 2222876 A JP2222876 A JP 2222876A JP 2222876 A JP2222876 A JP 2222876A JP S52106282 A JPS52106282 A JP S52106282A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- laser unit
- type gaas
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: Zn is diffused to N-type GaAs to form a layer, and the unnecessary area other than Zn diffusion layer is removed using etching solution which etches only P- and N- type GaAs layer not AlGaAs layer. As a result, the stripe laser can be obtained, which has less voltage extension from diffusion layer and has oscillation in low temperature and low current.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2222876A JPS52106282A (en) | 1976-03-03 | 1976-03-03 | Semiconductor laser unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2222876A JPS52106282A (en) | 1976-03-03 | 1976-03-03 | Semiconductor laser unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52106282A true JPS52106282A (en) | 1977-09-06 |
JPS545274B2 JPS545274B2 (en) | 1979-03-15 |
Family
ID=12076930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2222876A Granted JPS52106282A (en) | 1976-03-03 | 1976-03-03 | Semiconductor laser unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52106282A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58155857U (en) * | 1982-04-09 | 1983-10-18 | 三洋電機株式会社 | semiconductor laser |
JPH01147885U (en) * | 1988-03-31 | 1989-10-12 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826384A (en) * | 1971-08-09 | 1973-04-06 | ||
JPS50788A (en) * | 1973-05-02 | 1975-01-07 | ||
JPS5071281A (en) * | 1973-10-26 | 1975-06-13 |
-
1976
- 1976-03-03 JP JP2222876A patent/JPS52106282A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826384A (en) * | 1971-08-09 | 1973-04-06 | ||
JPS50788A (en) * | 1973-05-02 | 1975-01-07 | ||
JPS5071281A (en) * | 1973-10-26 | 1975-06-13 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58155857U (en) * | 1982-04-09 | 1983-10-18 | 三洋電機株式会社 | semiconductor laser |
JPH01147885U (en) * | 1988-03-31 | 1989-10-12 |
Also Published As
Publication number | Publication date |
---|---|
JPS545274B2 (en) | 1979-03-15 |
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