JPS52106282A - Semiconductor laser unit - Google Patents

Semiconductor laser unit

Info

Publication number
JPS52106282A
JPS52106282A JP2222876A JP2222876A JPS52106282A JP S52106282 A JPS52106282 A JP S52106282A JP 2222876 A JP2222876 A JP 2222876A JP 2222876 A JP2222876 A JP 2222876A JP S52106282 A JPS52106282 A JP S52106282A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
laser unit
type gaas
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2222876A
Other languages
Japanese (ja)
Other versions
JPS545274B2 (en
Inventor
Hitoshi Kawaguchi
Goji Kawakami
Suzuko Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2222876A priority Critical patent/JPS52106282A/en
Publication of JPS52106282A publication Critical patent/JPS52106282A/en
Publication of JPS545274B2 publication Critical patent/JPS545274B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: Zn is diffused to N-type GaAs to form a layer, and the unnecessary area other than Zn diffusion layer is removed using etching solution which etches only P- and N- type GaAs layer not AlGaAs layer. As a result, the stripe laser can be obtained, which has less voltage extension from diffusion layer and has oscillation in low temperature and low current.
COPYRIGHT: (C)1977,JPO&Japio
JP2222876A 1976-03-03 1976-03-03 Semiconductor laser unit Granted JPS52106282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2222876A JPS52106282A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2222876A JPS52106282A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Publications (2)

Publication Number Publication Date
JPS52106282A true JPS52106282A (en) 1977-09-06
JPS545274B2 JPS545274B2 (en) 1979-03-15

Family

ID=12076930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2222876A Granted JPS52106282A (en) 1976-03-03 1976-03-03 Semiconductor laser unit

Country Status (1)

Country Link
JP (1) JPS52106282A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155857U (en) * 1982-04-09 1983-10-18 三洋電機株式会社 semiconductor laser
JPH01147885U (en) * 1988-03-31 1989-10-12

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826384A (en) * 1971-08-09 1973-04-06
JPS50788A (en) * 1973-05-02 1975-01-07
JPS5071281A (en) * 1973-10-26 1975-06-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826384A (en) * 1971-08-09 1973-04-06
JPS50788A (en) * 1973-05-02 1975-01-07
JPS5071281A (en) * 1973-10-26 1975-06-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155857U (en) * 1982-04-09 1983-10-18 三洋電機株式会社 semiconductor laser
JPH01147885U (en) * 1988-03-31 1989-10-12

Also Published As

Publication number Publication date
JPS545274B2 (en) 1979-03-15

Similar Documents

Publication Publication Date Title
JPS5356972A (en) Mesa type semiconductor device
JPS52106282A (en) Semiconductor laser unit
JPS52101970A (en) Semiconductor element having schottoky barriercontact
JPS51134594A (en) Semiconductor leser device
JPS52106283A (en) Semiconductor laser unit
JPS5437594A (en) Semiconductor laser and its manufacture
JPS5311590A (en) Semiconductor laser device
JPS577978A (en) Opto-electronic switch
JPS5267275A (en) Semiconductor unit
JPS5313366A (en) Manufacture of mesa-type semiconductor device
JPS5367389A (en) Production of semiconductor laser
JPS5335485A (en) Semiconductor laser unit
JPS5356980A (en) Production of semiconductor device
JPS5591892A (en) Semiconductor laser light emission device
JPS5317084A (en) Buried hetero type semiconductor laser device
JPS5268391A (en) Semiconductor laser
JPS53108778A (en) Transistor
JPS5425686A (en) Semiconductor junction laser
JPS5578580A (en) Manufacture of semiconductor light-emitting diode
JPS5234686A (en) Double hetero junction type semiconductor laser element and its manufa cturing process
JPS5398790A (en) Semiconductor light emitting element
JPS5410689A (en) Semiconductor laser device and its production
JPS5330886A (en) Semiconducjtor laser element
JPS5414183A (en) Semiconductor laser element and its manufacture
JPS5356987A (en) Semiconductor laser device