JPS5335485A - Semiconductor laser unit - Google Patents

Semiconductor laser unit

Info

Publication number
JPS5335485A
JPS5335485A JP11034276A JP11034276A JPS5335485A JP S5335485 A JPS5335485 A JP S5335485A JP 11034276 A JP11034276 A JP 11034276A JP 11034276 A JP11034276 A JP 11034276A JP S5335485 A JPS5335485 A JP S5335485A
Authority
JP
Japan
Prior art keywords
laser unit
semiconductor laser
electrode
reach
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11034276A
Other languages
Japanese (ja)
Other versions
JPS5420400B2 (en
Inventor
Kuniaki Iwamoto
Isao Hino
Rangu
Roi
Itsuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11034276A priority Critical patent/JPS5335485A/en
Publication of JPS5335485A publication Critical patent/JPS5335485A/en
Publication of JPS5420400B2 publication Critical patent/JPS5420400B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: A stripe electrode is constituted so that one edge of the electrode may not reach a laser resonator face at least, and P type impurity is diffused to reach an active layer only in the electrode part beforehand, thereby obtaining a laser unit with a high efficiency and a long life.
COPYRIGHT: (C)1978,JPO&Japio
JP11034276A 1976-09-14 1976-09-14 Semiconductor laser unit Granted JPS5335485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11034276A JPS5335485A (en) 1976-09-14 1976-09-14 Semiconductor laser unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11034276A JPS5335485A (en) 1976-09-14 1976-09-14 Semiconductor laser unit

Publications (2)

Publication Number Publication Date
JPS5335485A true JPS5335485A (en) 1978-04-01
JPS5420400B2 JPS5420400B2 (en) 1979-07-23

Family

ID=14533312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11034276A Granted JPS5335485A (en) 1976-09-14 1976-09-14 Semiconductor laser unit

Country Status (1)

Country Link
JP (1) JPS5335485A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173393A (en) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト Semiconductor stripe laser
JPS6362292A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Semiconductor laser device and manufacture thereof
JPS6355566U (en) * 1986-09-30 1988-04-14

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4994292A (en) * 1973-01-11 1974-09-06

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173393A (en) * 1984-09-14 1986-04-15 シーメンス、アクチエンゲゼルシヤフト Semiconductor stripe laser
JPS6362292A (en) * 1986-09-02 1988-03-18 Mitsubishi Electric Corp Semiconductor laser device and manufacture thereof
JPS6355566U (en) * 1986-09-30 1988-04-14

Also Published As

Publication number Publication date
JPS5420400B2 (en) 1979-07-23

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