JPS55130158A - Semiconductor pellet - Google Patents

Semiconductor pellet

Info

Publication number
JPS55130158A
JPS55130158A JP3686679A JP3686679A JPS55130158A JP S55130158 A JPS55130158 A JP S55130158A JP 3686679 A JP3686679 A JP 3686679A JP 3686679 A JP3686679 A JP 3686679A JP S55130158 A JPS55130158 A JP S55130158A
Authority
JP
Japan
Prior art keywords
main surfaces
semiconductor pellet
side end
pellet
communicating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3686679A
Other languages
Japanese (ja)
Inventor
Seiji Tauchi
Masashi Yamamoto
Shinichiro Miyoshi
Hajime Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3686679A priority Critical patent/JPS55130158A/en
Publication of JPS55130158A publication Critical patent/JPS55130158A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Dicing (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To prevent the occurrence of a rise on the side end surface of a semiconductor pellet by beveling the corners formed of a pair of main surfaces disposed substantially in parallel and at opposite side each other and side end surfaces communicating with the main surfaces each other. CONSTITUTION:The profile of a diode semiconductor pellet 1 formed with a pn junction is formed substantially in parallel with each other and specified by a pair of main surfaces 11, 12 disposed oppositely to each other and side end surface 13 communicating with the main surfaces each other. The corners of the surfaces 11, 12 and the surface 13 are beveled, and the surface 13 is curved at the side near the surfaces 11, 12. On the surface of the pellet 1 are formed a surface stabilized film 2, a salient pole layer 3, and an electrode layer 4.
JP3686679A 1979-03-30 1979-03-30 Semiconductor pellet Pending JPS55130158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3686679A JPS55130158A (en) 1979-03-30 1979-03-30 Semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3686679A JPS55130158A (en) 1979-03-30 1979-03-30 Semiconductor pellet

Publications (1)

Publication Number Publication Date
JPS55130158A true JPS55130158A (en) 1980-10-08

Family

ID=12481697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3686679A Pending JPS55130158A (en) 1979-03-30 1979-03-30 Semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS55130158A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840840A (en) * 1981-09-03 1983-03-09 Nec Corp Semiconductor device and manufacture thereof
JP2008529258A (en) * 2005-01-24 2008-07-31 松下電器産業株式会社 Manufacturing method of semiconductor chip

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991380A (en) * 1972-12-29 1974-08-31
JPS5127772A (en) * 1974-09-02 1976-03-08 Nippon Electric Co Handotaisochi no seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4991380A (en) * 1972-12-29 1974-08-31
JPS5127772A (en) * 1974-09-02 1976-03-08 Nippon Electric Co Handotaisochi no seizohoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840840A (en) * 1981-09-03 1983-03-09 Nec Corp Semiconductor device and manufacture thereof
JP2008529258A (en) * 2005-01-24 2008-07-31 松下電器産業株式会社 Manufacturing method of semiconductor chip
US8383436B2 (en) 2005-01-24 2013-02-26 Panasonic Corporation Manufacturing method for semiconductor chips, and semiconductor chip

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