JPS553685A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS553685A JPS553685A JP7685278A JP7685278A JPS553685A JP S553685 A JPS553685 A JP S553685A JP 7685278 A JP7685278 A JP 7685278A JP 7685278 A JP7685278 A JP 7685278A JP S553685 A JPS553685 A JP S553685A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- charge
- portions
- resin
- end surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
PURPOSE: To prevent the change of characteristics, by covering pn junction end portions with insulating films while electrically connecting portions except semiconductor materials to encap materials.
CONSTITUTION: Thermal oxidized films 9 cover only each end surface portion of pn junction 6W8, and remaining portions, portions among end surfaces, contact with mold resin 15. When forward voltage is applied to an anode 10 and a cathode 12 in this constitution, inverse voltage is not applied to the pn junction 6, 8, and charge is not produced in the film 15 on the insulating films 9. Charge is not yielded because semiconductor materials directly contact with resin among pn junction ends. Meanwhile, inverse voltage is applied to the pn junction 7, but appearing charge is little and is easy to become extinct because the insulating films 9 are glued only to an extremely narrow range of an end surface portion of the pn junction 7 and both sides directly contact with the semiconductor materials and the resin 15. Thus, the characteristics of the junction 6, 8 also do not change because the depletion layers of the end surface portions of the pn junction 7 are not subject to the effect of charge and charge in the resin on the junction 7 is little.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7685278A JPS553685A (en) | 1978-06-23 | 1978-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7685278A JPS553685A (en) | 1978-06-23 | 1978-06-23 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS553685A true JPS553685A (en) | 1980-01-11 |
Family
ID=13617176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7685278A Pending JPS553685A (en) | 1978-06-23 | 1978-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS553685A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577978A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Opto-electronic switch |
-
1978
- 1978-06-23 JP JP7685278A patent/JPS553685A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS577978A (en) * | 1980-06-18 | 1982-01-16 | Nippon Telegr & Teleph Corp <Ntt> | Opto-electronic switch |
JPH0353789B2 (en) * | 1980-06-18 | 1991-08-16 |
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