JPS553685A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS553685A
JPS553685A JP7685278A JP7685278A JPS553685A JP S553685 A JPS553685 A JP S553685A JP 7685278 A JP7685278 A JP 7685278A JP 7685278 A JP7685278 A JP 7685278A JP S553685 A JPS553685 A JP S553685A
Authority
JP
Japan
Prior art keywords
junction
charge
portions
resin
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7685278A
Other languages
Japanese (ja)
Inventor
Mikio Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP7685278A priority Critical patent/JPS553685A/en
Publication of JPS553685A publication Critical patent/JPS553685A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent the change of characteristics, by covering pn junction end portions with insulating films while electrically connecting portions except semiconductor materials to encap materials.
CONSTITUTION: Thermal oxidized films 9 cover only each end surface portion of pn junction 6W8, and remaining portions, portions among end surfaces, contact with mold resin 15. When forward voltage is applied to an anode 10 and a cathode 12 in this constitution, inverse voltage is not applied to the pn junction 6, 8, and charge is not produced in the film 15 on the insulating films 9. Charge is not yielded because semiconductor materials directly contact with resin among pn junction ends. Meanwhile, inverse voltage is applied to the pn junction 7, but appearing charge is little and is easy to become extinct because the insulating films 9 are glued only to an extremely narrow range of an end surface portion of the pn junction 7 and both sides directly contact with the semiconductor materials and the resin 15. Thus, the characteristics of the junction 6, 8 also do not change because the depletion layers of the end surface portions of the pn junction 7 are not subject to the effect of charge and charge in the resin on the junction 7 is little.
COPYRIGHT: (C)1980,JPO&Japio
JP7685278A 1978-06-23 1978-06-23 Semiconductor device Pending JPS553685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7685278A JPS553685A (en) 1978-06-23 1978-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7685278A JPS553685A (en) 1978-06-23 1978-06-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS553685A true JPS553685A (en) 1980-01-11

Family

ID=13617176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7685278A Pending JPS553685A (en) 1978-06-23 1978-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS553685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577978A (en) * 1980-06-18 1982-01-16 Nippon Telegr & Teleph Corp <Ntt> Opto-electronic switch

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577978A (en) * 1980-06-18 1982-01-16 Nippon Telegr & Teleph Corp <Ntt> Opto-electronic switch
JPH0353789B2 (en) * 1980-06-18 1991-08-16

Similar Documents

Publication Publication Date Title
JPS553685A (en) Semiconductor device
JPS556847A (en) Semiconductor device
JPS551153A (en) Semiconductor fitting device
JPS54112189A (en) Mesa semiconductor device
JPS5533075A (en) Mesa semiconductor device
JPS52129380A (en) Semiconductor device
JPS5236470A (en) Semiconductor unit
JPS52109380A (en) Convertor for photoelectric
JPS5286782A (en) Production of semiconductor integrated circuit
JPS55130158A (en) Semiconductor pellet
JPS5353973A (en) Semiconductor device
JPS5791566A (en) Solar battery element
JPS5468162A (en) Semiconductor device
JPS5376663A (en) Semiconductor device
JPS54156474A (en) Semiconductor device
JPS5287988A (en) High dielectric strength semiconductor device
JPS5339073A (en) Semiconductor device
JPS54149486A (en) Pressure-sensitive element
JPS5374891A (en) Solar battery circuit
JPS54156481A (en) Semiconductor device
JPS5519871A (en) Transistor
JPS5511325A (en) Solar cell element
JPS5263694A (en) Photoelectric converting device
JPS5779657A (en) Semiconductor device
JPS5511370A (en) Semiconductor laser system