JPS5511325A - Solar cell element - Google Patents
Solar cell elementInfo
- Publication number
- JPS5511325A JPS5511325A JP8339978A JP8339978A JPS5511325A JP S5511325 A JPS5511325 A JP S5511325A JP 8339978 A JP8339978 A JP 8339978A JP 8339978 A JP8339978 A JP 8339978A JP S5511325 A JPS5511325 A JP S5511325A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- back flow
- light receiving
- semiconductor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To make it possible to insert a back flow stop element inside a thin device, by providing a light receiving element surface and a back flow stop element on the reference surface side of a semiconductor base, and thereby forming a solar cell element, to be fitted to a terminal of a composite solar cell unit.
CONSTITUTION: On the reference surface side of semiconductor base 2, independent semiconductor layers 4, 5 are formed by diffusion via oxide isolation film 3, which is divided into two regions. P-N junction semiconductor light receiving element PD is formed between layer 4 and base 2, and semiconductor element BD for stopping a back flow is formed between layer 5 and base 2. Element BD is provided with a sufficient region for forming a back flow stop diode. Light receiving surface 6 of light receiving element PD is fitted with plus electrode 7, and thereby solar cell elements 21∼51 are formed. A composite solar cell unit is formed by combining these elements 21∼51. Solar cell element 1 is formed by constructing a back flow stop diode on element BD. This is used at one end of the unit and thereby the unit is made compact.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8339978A JPS5511325A (en) | 1978-07-08 | 1978-07-08 | Solar cell element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8339978A JPS5511325A (en) | 1978-07-08 | 1978-07-08 | Solar cell element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5511325A true JPS5511325A (en) | 1980-01-26 |
Family
ID=13801343
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8339978A Pending JPS5511325A (en) | 1978-07-08 | 1978-07-08 | Solar cell element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5511325A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858776A (en) * | 1981-10-02 | 1983-04-07 | Sanyo Electric Co Ltd | Charger for battery |
US5330583A (en) * | 1991-09-30 | 1994-07-19 | Sharp Kabushiki Kaisha | Solar battery module |
-
1978
- 1978-07-08 JP JP8339978A patent/JPS5511325A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5858776A (en) * | 1981-10-02 | 1983-04-07 | Sanyo Electric Co Ltd | Charger for battery |
US5330583A (en) * | 1991-09-30 | 1994-07-19 | Sharp Kabushiki Kaisha | Solar battery module |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL61616A (en) | Multilayer photovoltaic solar cell with semiconductor layer at the shorting junction interface of the layers | |
JPS51114886A (en) | Photocoupling semiconductor device and its manufacturing process | |
JPS54101688A (en) | Optical semiconductor device | |
JPS53111285A (en) | Low crosstalk monolithic pnpn switch matrix by pn junction isolation method | |
JPS5511325A (en) | Solar cell element | |
JPS5356988A (en) | Photovoltaic element | |
JPS5363993A (en) | Production of semiconductor device | |
JPS5417682A (en) | Semiconductor and its manufacture | |
JPS551170A (en) | Semiconductor apparatus | |
JPS52155080A (en) | Semiconductor light emitting device | |
JPS5378181A (en) | Semiconductor device and its manufacture | |
JPS5396666A (en) | Manufacture of semiconductor device with pn junction | |
JPS53137688A (en) | Semiconductor device of mesa type | |
JPS5252379A (en) | Semiconductor device | |
JPS5511370A (en) | Semiconductor laser system | |
JPS5380184A (en) | Manufacture of semiconductor device | |
JPS56165367A (en) | Semiconductor photoelectric convertor | |
JPS5287373A (en) | Production of semiconductor device | |
JPS5310987A (en) | Photoelectric transducing semiconductor device | |
JPS54156474A (en) | Semiconductor device | |
JPS5342748A (en) | Photo semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5329686A (en) | Semiconductor laser | |
JPS57109368A (en) | Semiconductor memory device | |
JPS52144988A (en) | Semiconductor light emitting element |