JPS56165367A - Semiconductor photoelectric convertor - Google Patents

Semiconductor photoelectric convertor

Info

Publication number
JPS56165367A
JPS56165367A JP6916680A JP6916680A JPS56165367A JP S56165367 A JPS56165367 A JP S56165367A JP 6916680 A JP6916680 A JP 6916680A JP 6916680 A JP6916680 A JP 6916680A JP S56165367 A JPS56165367 A JP S56165367A
Authority
JP
Japan
Prior art keywords
junction
light
layer
photoelectric convertor
pnp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6916680A
Other languages
Japanese (ja)
Inventor
Yoshitaka Shibata
Eiji Ikuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP6916680A priority Critical patent/JPS56165367A/en
Publication of JPS56165367A publication Critical patent/JPS56165367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an output current whose direction is reversed based on the wavelength of an incident light by forming a three-layer structure of NPN or PNP semiconductors, and taking out electrodes from the first and the third layers. CONSTITUTION:The first PN junction 2 is formed at a very shallow position in the vicinity of the surface into which a light 1 enters, and the second PN junction 3 is formed at the position deeper than the first PN junction 2. As a whole, is formed the three-layer structure of the semiconductors comprising the first-third layers I-III of NPN or PNP. The first and the second electrodes (a) and (b) are taken out of the first layer I and the third layer III, respectively. Thus, the output current whose flowing direction is reversed based on the wavelength of the incident light is obtained. A filter F is provided on the light incident side of this photoelectric convertor.
JP6916680A 1980-05-23 1980-05-23 Semiconductor photoelectric convertor Pending JPS56165367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6916680A JPS56165367A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric convertor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6916680A JPS56165367A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric convertor

Publications (1)

Publication Number Publication Date
JPS56165367A true JPS56165367A (en) 1981-12-18

Family

ID=13394847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6916680A Pending JPS56165367A (en) 1980-05-23 1980-05-23 Semiconductor photoelectric convertor

Country Status (1)

Country Link
JP (1) JPS56165367A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018198314A (en) * 2017-05-24 2018-12-13 ツィンファ ユニバーシティ Photodetector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018198314A (en) * 2017-05-24 2018-12-13 ツィンファ ユニバーシティ Photodetector

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