JPS5718373A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS5718373A
JPS5718373A JP9302580A JP9302580A JPS5718373A JP S5718373 A JPS5718373 A JP S5718373A JP 9302580 A JP9302580 A JP 9302580A JP 9302580 A JP9302580 A JP 9302580A JP S5718373 A JPS5718373 A JP S5718373A
Authority
JP
Japan
Prior art keywords
layer
inp
type impurity
same conductive
photoreceiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9302580A
Other languages
Japanese (ja)
Other versions
JPS6146076B2 (en
Inventor
Fukunobu Aisaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9302580A priority Critical patent/JPS5718373A/en
Priority to US06/281,304 priority patent/US4442444A/en
Priority to DE8181303108T priority patent/DE3172668D1/en
Priority to EP81303108A priority patent/EP0043734B1/en
Publication of JPS5718373A publication Critical patent/JPS5718373A/en
Publication of JPS6146076B2 publication Critical patent/JPS6146076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an APD having excellent characteristics, e.g., high magnification factor, low dark current, etc. with a sensitivity for the light of 1.2-1.65mum of wavelength by forming specific buffer layer, light absorption layer, two-layer InP layer, photoreceiving element, etc. on a substrate. CONSTITUTION:The same conductive type impurity-containing InP buffer layer 21, an InGaAs light absorption layer 31, and an InP first layer 41 are formed on an InP substrate 2 containing N type or P type impurity. An InP second layer 41 containing the same conductive type impurity as the first layer 41 higher in density than the first layer 41 is formed thereon, and different conductive impurity high density photodetector 61 are formed on a part of the region. Further, the same conductive type impurity high density containing guard ring 43 is formed on a part of the surface layer of the second layer 41 around the photoreceiving element 61.
JP9302580A 1980-07-08 1980-07-08 Semiconductor photoreceiving element Granted JPS5718373A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9302580A JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element
US06/281,304 US4442444A (en) 1980-07-08 1981-07-08 Avalanche photodiodes
DE8181303108T DE3172668D1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes
EP81303108A EP0043734B1 (en) 1980-07-08 1981-07-08 Avalanche photodiodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9302580A JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Publications (2)

Publication Number Publication Date
JPS5718373A true JPS5718373A (en) 1982-01-30
JPS6146076B2 JPS6146076B2 (en) 1986-10-11

Family

ID=14070941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9302580A Granted JPS5718373A (en) 1980-07-08 1980-07-08 Semiconductor photoreceiving element

Country Status (1)

Country Link
JP (1) JPS5718373A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor photo receptor
JPH02100379A (en) * 1988-10-07 1990-04-12 Hikari Keisoku Gijutsu Kaihatsu Kk Photo-detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254674A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor photo receptor
JPH02100379A (en) * 1988-10-07 1990-04-12 Hikari Keisoku Gijutsu Kaihatsu Kk Photo-detector

Also Published As

Publication number Publication date
JPS6146076B2 (en) 1986-10-11

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