JPS56158488A - Semiconductor device - Google Patents

Abstract

PURPOSE:To equalize the breakdown voltage of avalanche photodiodes and the like, by providing mesa grooves in a semiconductor layer whose conductive type of the surface layer is different from that of the intermediate layer and the basic body, and embedding a semiconductor whose conductive type is the same as the intermediate layer and energy gap is wide. CONSTITUTION:For example, N type InGaAs 12 and P<+> InGaAs 13 are epitaxially grown sequentially on an N<+> InP substrate 11, and the mesa grooves 15' are provided with an insulating film 18 as a mask. The inside of said grooves 15' is, e.g., gas-etched and cleaned. Then, N<->InP layers 15 are epitaxially grown, and the grooves 15' are embedded. Thereafter, electrodes 16 and 17 are provided, and the avalanche photodiode is obtained. Said photodiode has junction planes 14 and 14'. However, since the energy gap of the embedded layer 15 is wider than the intermediate layer 12, the junction 14' has the higher breakdown voltage than the junction 14. Therefore, the breakdown voltage of the photodiode is not decreased but is equalized, and, e.g., multiplying gain can be increased.