JPS56158488A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56158488A
JPS56158488A JP6430080A JP6430080A JPS56158488A JP S56158488 A JPS56158488 A JP S56158488A JP 6430080 A JP6430080 A JP 6430080A JP 6430080 A JP6430080 A JP 6430080A JP S56158488 A JPS56158488 A JP S56158488A
Authority
JP
Japan
Prior art keywords
grooves
breakdown voltage
junction
photodiode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6430080A
Other languages
Japanese (ja)
Inventor
Kazuhisa Takahashi
Saburou Takamiya
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6430080A priority Critical patent/JPS56158488A/en
Publication of JPS56158488A publication Critical patent/JPS56158488A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Abstract

PURPOSE:To equalize the breakdown voltage of avalanche photodiodes and the like, by providing mesa grooves in a semiconductor layer whose conductive type of the surface layer is different from that of the intermediate layer and the basic body, and embedding a semiconductor whose conductive type is the same as the intermediate layer and energy gap is wide. CONSTITUTION:For example, N type InGaAs 12 and P<+> InGaAs 13 are epitaxially grown sequentially on an N<+> InP substrate 11, and the mesa grooves 15' are provided with an insulating film 18 as a mask. The inside of said grooves 15' is, e.g., gas-etched and cleaned. Then, N<->InP layers 15 are epitaxially grown, and the grooves 15' are embedded. Thereafter, electrodes 16 and 17 are provided, and the avalanche photodiode is obtained. Said photodiode has junction planes 14 and 14'. However, since the energy gap of the embedded layer 15 is wider than the intermediate layer 12, the junction 14' has the higher breakdown voltage than the junction 14. Therefore, the breakdown voltage of the photodiode is not decreased but is equalized, and, e.g., multiplying gain can be increased.
JP6430080A 1980-05-12 1980-05-12 Semiconductor device Pending JPS56158488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6430080A JPS56158488A (en) 1980-05-12 1980-05-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6430080A JPS56158488A (en) 1980-05-12 1980-05-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56158488A true JPS56158488A (en) 1981-12-07

Family

ID=13254254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6430080A Pending JPS56158488A (en) 1980-05-12 1980-05-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56158488A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS58197782A (en) * 1982-05-13 1983-11-17 Fujitsu Ltd Semiconductor light-receiving device
US4982269A (en) * 1988-05-10 1991-01-01 Thomson Hybrides Et Microondes Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device
JPS5654080A (en) * 1979-10-08 1981-05-13 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513957A (en) * 1978-07-17 1980-01-31 Nec Corp Semiconductor device
JPS5654080A (en) * 1979-10-08 1981-05-13 Kokusai Denshin Denwa Co Ltd <Kdd> Avalanche photodiode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111073A (en) * 1980-12-26 1982-07-10 Sumitomo Electric Ind Ltd Semiconductor light-receiving element
JPS58197782A (en) * 1982-05-13 1983-11-17 Fujitsu Ltd Semiconductor light-receiving device
JPH0159747B2 (en) * 1982-05-13 1989-12-19 Fujitsu Ltd
US4982269A (en) * 1988-05-10 1991-01-01 Thomson Hybrides Et Microondes Blanar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof
US5102822A (en) * 1988-05-10 1992-04-07 Thomson Hybrides Et Microondes Planar-type microwave integrated circuit with at least one mesa component, method of fabrication thereof

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