JPS5533031A - Light-detecting semiconductor device - Google Patents
Light-detecting semiconductor deviceInfo
- Publication number
- JPS5533031A JPS5533031A JP10495878A JP10495878A JPS5533031A JP S5533031 A JPS5533031 A JP S5533031A JP 10495878 A JP10495878 A JP 10495878A JP 10495878 A JP10495878 A JP 10495878A JP S5533031 A JPS5533031 A JP S5533031A
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- impurity concentration
- substrate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To improve the frequency response of light-detecting semiconductor device under a low bias voltage, by relating the thickness W(μm) of an epitaxial layer grown on a semiconductor substrate to the mean value N of impurity concentration (/cm3) in a as W≤-34.7logN+482.2.
CONSTITUTION: A π-type layer 12 is epitaxially grown at an impurity concentration of 1×1013/cm3 and a thickness of 25μm on a P-type silicon substrate 11 to which an ohmic electrode can be easily attached and whose resistivity is set at 0.01Ωcm or less so that the series resistance is reduced. An annular N-type region 131 is produced by diffusion at an impurity concentration of about 1×1019/cm3 in a prescribed part of the layer 12. An N-type region 13 having a surface impurity concentration of about 5×1019/cm3 and a smaller depth than the region 131 is produced by diffusion in a part of the layer 12 surrounded by the annular region 131. The layer 12 is then mesa-etched between the substrate 11 and both the ends of the region 131. An SiO2 film 14 is coated on the etched part. An anti-reflection film 15 is coated on the region 131. Electrodes 16 are attached to the region 131. Another electrode 17 is attached to the reverse side of the substrate 11.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10495878A JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10495878A JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5533031A true JPS5533031A (en) | 1980-03-08 |
| JPS6222471B2 JPS6222471B2 (en) | 1987-05-18 |
Family
ID=14394597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10495878A Granted JPS5533031A (en) | 1978-08-30 | 1978-08-30 | Light-detecting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5533031A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003023173A (en) * | 2001-07-06 | 2003-01-24 | Sumitomo Electric Ind Ltd | pin TYPE LIGHT RECEIVING ELEMENT |
| WO2006062300A1 (en) * | 2004-12-08 | 2006-06-15 | Electronics And Telecommunications Research Institute | Silicon-based light emitting diode |
| US7671377B2 (en) | 2004-12-08 | 2010-03-02 | Electronics And Telecommunications Research Institute | Silicon based light emitting diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158292A (en) * | 1973-11-28 | 1975-12-22 | ||
| JPS516494A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd |
-
1978
- 1978-08-30 JP JP10495878A patent/JPS5533031A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50158292A (en) * | 1973-11-28 | 1975-12-22 | ||
| JPS516494A (en) * | 1974-07-05 | 1976-01-20 | Hitachi Ltd |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003023173A (en) * | 2001-07-06 | 2003-01-24 | Sumitomo Electric Ind Ltd | pin TYPE LIGHT RECEIVING ELEMENT |
| WO2006062300A1 (en) * | 2004-12-08 | 2006-06-15 | Electronics And Telecommunications Research Institute | Silicon-based light emitting diode |
| US7671377B2 (en) | 2004-12-08 | 2010-03-02 | Electronics And Telecommunications Research Institute | Silicon based light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6222471B2 (en) | 1987-05-18 |
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