JPS5595374A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5595374A JPS5595374A JP325179A JP325179A JPS5595374A JP S5595374 A JPS5595374 A JP S5595374A JP 325179 A JP325179 A JP 325179A JP 325179 A JP325179 A JP 325179A JP S5595374 A JPS5595374 A JP S5595374A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- schottky barrier
- film
- si3n4 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
PURPOSE:To obtain a diode with a high reverse breakdown voltage by a method wherein a mesa is formed on a part of the surface of a semiconductor substrate, the surface, except for the summit part, is covered with an insulating protective film, and a Schottky barrier metal is fitted on the entire, exposed mesa summit part. CONSTITUTION:An Si layer 6 is epitaxially grown on Si substrate 9, and the part in which a Schottky barrier is to be formed is covered with Si3N4 film. Next, by using this Si3N4 film as a mask, layer 6 is etched to a specified depth, and a mesa structure consisting of layer 6 is produced below the Si3N4 film only. Subsequently, SiO2 film 7 is fitted on layer 6, which has become thin, and the Si3N4 film is removed; and Schottky barrier metal 8 is evaporated on the entire mesa summit part. In this way, layer 6 surrounding the barrier is removed to a depth corresponding to the depth of the pn-junction, and thereby the part that would give adverse effect on the high frequency characteristics is eliminated. As a result, a Schottky barrier diode with a high reverse breadkown voltage can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP325179A JPS5595374A (en) | 1979-01-11 | 1979-01-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP325179A JPS5595374A (en) | 1979-01-11 | 1979-01-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5595374A true JPS5595374A (en) | 1980-07-19 |
Family
ID=11552239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP325179A Pending JPS5595374A (en) | 1979-01-11 | 1979-01-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595374A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
| US5686753A (en) * | 1994-11-11 | 1997-11-11 | Murata Manufacturing Co., Ltd. | Schottky barrier diode having a mesa structure |
-
1979
- 1979-01-11 JP JP325179A patent/JPS5595374A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
| US5686753A (en) * | 1994-11-11 | 1997-11-11 | Murata Manufacturing Co., Ltd. | Schottky barrier diode having a mesa structure |
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