JPS562625A - Manufacture of epitaxial wafer - Google Patents

Manufacture of epitaxial wafer

Info

Publication number
JPS562625A
JPS562625A JP7765279A JP7765279A JPS562625A JP S562625 A JPS562625 A JP S562625A JP 7765279 A JP7765279 A JP 7765279A JP 7765279 A JP7765279 A JP 7765279A JP S562625 A JPS562625 A JP S562625A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
area
ruggedness
layer
formed
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7765279A
Inventor
Katsunori Ichikawa
Shohei Sekiya
Yuki Shimada
Original Assignee
Nippon Telegr & Teleph Corp <Ntt>
Shindengen Electric Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To increase the current treating capacity of an epitaxial wafer per unit area without increasing the forward voltage drop by etching anisotropically the plane (100) of an Si substrate to form ruggedness thereon and accumulating an epitaxial layer thereon. CONSTITUTION:The pattern of SiO2 film 4 is formed on the N-type Si substrate 1 having a plane (100), and is aniostropically etched. Then, an Si layer 2 containing no addition is accumulated on the surface opposite to the surface formed with ruggedness, and an N-type Si layer 3 is epitaxially formed on the rugged surface. The angle Q of the ruggedness thus becomes approx. 55 deg. to increase the area 1.72 times as large as the flat plate. The area of the rugged surface may be increased 2.366 times as large as the original area under the control of the shape (sizes a, b and h) of the ruggedness. A Schottky barrier metal 5 such as Cr or the like is attached to the layer 3. In this structure the area of the substrate can be reduced in the same current treating capacity without increasing the forward voltage drop. Accordingly, it is effective to be applied to a diode having less implantation and to Schottky barrier diode.
JP7765279A 1979-06-20 1979-06-20 Manufacture of epitaxial wafer Pending JPS562625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7765279A JPS562625A (en) 1979-06-20 1979-06-20 Manufacture of epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7765279A JPS562625A (en) 1979-06-20 1979-06-20 Manufacture of epitaxial wafer

Publications (1)

Publication Number Publication Date
JPS562625A true true JPS562625A (en) 1981-01-12

Family

ID=13639815

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7765279A Pending JPS562625A (en) 1979-06-20 1979-06-20 Manufacture of epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS562625A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
JPH05136444A (en) * 1991-11-15 1993-06-01 Sharp Corp Manufacture of solar cell
US5514614A (en) * 1993-01-07 1996-05-07 Matsushita Electric Industrial Co., Ltd. Method for producing quantization functional device utilizing a resonance tunneling effect
US5739544A (en) * 1993-05-26 1998-04-14 Matsushita Electric Industrial Co., Ltd. Quantization functional device utilizing a resonance tunneling effect and method for producing the same
US5945687A (en) * 1995-11-30 1999-08-31 Matsushita Electric Industrial Co., Ltd. Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same
JP2004521480A (en) * 2000-08-31 2004-07-15 ゼネラル セミコンダクター,インク. Trench Schottky rectifier
JP2010016065A (en) * 2008-07-01 2010-01-21 Furukawa Electric Co Ltd:The Schottky barrier diode and manufacturing method thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990988A (en) * 1989-06-09 1991-02-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Laterally stacked Schottky diodes for infrared sensor applications
JPH05136444A (en) * 1991-11-15 1993-06-01 Sharp Corp Manufacture of solar cell
US5514614A (en) * 1993-01-07 1996-05-07 Matsushita Electric Industrial Co., Ltd. Method for producing quantization functional device utilizing a resonance tunneling effect
US5739544A (en) * 1993-05-26 1998-04-14 Matsushita Electric Industrial Co., Ltd. Quantization functional device utilizing a resonance tunneling effect and method for producing the same
US5945687A (en) * 1995-11-30 1999-08-31 Matsushita Electric Industrial Co., Ltd. Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same
US6103583A (en) * 1995-11-30 2000-08-15 Matsushita Electric Industrial Co., Ltd. Method for producing quantization functional device
JP2004521480A (en) * 2000-08-31 2004-07-15 ゼネラル セミコンダクター,インク. Trench Schottky rectifier
JP2010016065A (en) * 2008-07-01 2010-01-21 Furukawa Electric Co Ltd:The Schottky barrier diode and manufacturing method thereof

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