JPS56105625A - Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density - Google Patents

Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density

Info

Publication number
JPS56105625A
JPS56105625A JP808780A JP808780A JPS56105625A JP S56105625 A JPS56105625 A JP S56105625A JP 808780 A JP808780 A JP 808780A JP 808780 A JP808780 A JP 808780A JP S56105625 A JPS56105625 A JP S56105625A
Authority
JP
Japan
Prior art keywords
single crystal
density
compound semiconductor
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP808780A
Other languages
Japanese (ja)
Inventor
Yasuhiro Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP808780A priority Critical patent/JPS56105625A/en
Publication of JPS56105625A publication Critical patent/JPS56105625A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable to simple obtain a thin-film single crystal having a low transisition density and a high ratio resistance by a method wherein a high-ratio-resistance compound semiconductor is epitaxially grown on a low-transition-density substrate, and then said substrate is removed. CONSTITUTION:On the upper surface of an Si doped N type GaAs single crystal substrate 10 having transition density of 2,000cm<-2> and a covering of protective film 9, a semiinsulating GaAs epitaxial layer 11 is grown. An insulator 12 is provided on the layer 11 and then the substrate 10 is removed together with the protective film 9. As a result, the high-ratio-resistance and low-transition-density layer sticked to the insulator 12 can be obtained. A wafer for a semiconductor device is formed by providing an active layer on the layer 11 obtained by the above-mentioned method.
JP808780A 1980-01-26 1980-01-26 Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density Pending JPS56105625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP808780A JPS56105625A (en) 1980-01-26 1980-01-26 Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP808780A JPS56105625A (en) 1980-01-26 1980-01-26 Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density

Publications (1)

Publication Number Publication Date
JPS56105625A true JPS56105625A (en) 1981-08-22

Family

ID=11683534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP808780A Pending JPS56105625A (en) 1980-01-26 1980-01-26 Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density

Country Status (1)

Country Link
JP (1) JPS56105625A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116823A (en) * 1984-10-22 1986-06-04 Nec Corp Crystal growth method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152164A (en) * 1976-06-14 1977-12-17 Sumitomo Electric Ind Ltd Epitaxial wafer of group iii-v compound

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52152164A (en) * 1976-06-14 1977-12-17 Sumitomo Electric Ind Ltd Epitaxial wafer of group iii-v compound

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116823A (en) * 1984-10-22 1986-06-04 Nec Corp Crystal growth method

Similar Documents

Publication Publication Date Title
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
JPS5640275A (en) Preparation of semiconductor device
JPS54154977A (en) Semiconductor device and its manufacture
JPS5753927A (en) Compound semiconductor device
JPS55105344A (en) Semiconductor device
JPS5643754A (en) Manufacture of semiconductor device
JPS56105625A (en) Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density
JPS5513957A (en) Semiconductor device
JPS54141596A (en) Semiconductor device
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
JPS5623739A (en) Manufactue of semiconductor element having buried layer
JPS57115822A (en) Manufacture of semiconductor device
JPS5723280A (en) Field effect type light detector
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS53131765A (en) Production of semiconductor device
JPS5350687A (en) Production of semiconductor device
JPS5595374A (en) Semiconductor device
JPS57201063A (en) Manufacture of semiconductor device
JPS5787169A (en) Manufacture of semiconductor device
JPS57178394A (en) Manufacture of semiconductor light emitting device
JPS5575272A (en) Solar battery
JPS5481074A (en) Semiconductor device
JPS51117882A (en) Semiconductor device manufacturing method
JPS574119A (en) Semiconductor device and its manufacture
JPS548987A (en) Manufacture of field effect transistor