Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP12566776ApriorityCriticalpatent/JPS5350687A/en
Publication of JPS5350687ApublicationCriticalpatent/JPS5350687A/en
PURPOSE: To make buried layers and inhibit floating of the buried layers to an epitaxially grown layer at the time of growing said layer by etching a required amount of substrate surface having undergone the formation of impurity diffused layers then growing the epitaxial layer.
COPYRIGHT: (C)1978,JPO&Japio
JP12566776A1976-10-191976-10-19Production of semiconductor device
PendingJPS5350687A
(en)