JPS5586182A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5586182A JPS5586182A JP16164078A JP16164078A JPS5586182A JP S5586182 A JPS5586182 A JP S5586182A JP 16164078 A JP16164078 A JP 16164078A JP 16164078 A JP16164078 A JP 16164078A JP S5586182 A JPS5586182 A JP S5586182A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- impurity
- type
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To make it possible to form a pn junction at the desired place by providing a diffusion restricting layer in the process of manufacturing a semiconductor device having a hetero junction and a pn junction.
CONSTITUTION: p-Type B semiconductor is grown on n-type A semiconductor n-A, and n-A/p-B junction is formed. In this case, a layer containing an impurity (p in this case) having a higher diffusion speed and a layer which does not contain the same impurity, that is, non-doped layer non-B are placed between two layers, n-A, and p-B. When p-B growth is operated under this condition, p-type impurity is diffused in n-A layer, and n-type impurity is diffused in p-B layer. Here, since the diffusion speed of the p-type impurity is higher, pn junction 1 is formed at the place deviated toward the n-A side from hetero boundary surface 2. Consequently, by controlling the thickness of layer non-B, it is possible to form pn junction 1 of any desired depth regardless of impurity concentration, growth temperature, and growth time.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16164078A JPS5586182A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16164078A JPS5586182A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5586182A true JPS5586182A (en) | 1980-06-28 |
Family
ID=15739019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16164078A Pending JPS5586182A (en) | 1978-12-23 | 1978-12-23 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5586182A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164592A (en) * | 1981-04-01 | 1982-10-09 | Nec Corp | Semicondutor photo detector |
JPS59208888A (en) * | 1983-05-13 | 1984-11-27 | Nec Corp | Compound semiconductor light emitting element |
JPS61131582A (en) * | 1984-11-30 | 1986-06-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
JPS63140590A (en) * | 1986-12-02 | 1988-06-13 | Nec Corp | Semiconductor laser device |
-
1978
- 1978-12-23 JP JP16164078A patent/JPS5586182A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57164592A (en) * | 1981-04-01 | 1982-10-09 | Nec Corp | Semicondutor photo detector |
JPH0419714B2 (en) * | 1981-04-01 | 1992-03-31 | Nippon Electric Co | |
JPS59208888A (en) * | 1983-05-13 | 1984-11-27 | Nec Corp | Compound semiconductor light emitting element |
JPS61131582A (en) * | 1984-11-30 | 1986-06-19 | Sanyo Electric Co Ltd | Manufacture of semiconductor laser |
JPS63140590A (en) * | 1986-12-02 | 1988-06-13 | Nec Corp | Semiconductor laser device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1226899A (en) | ||
JPS5586182A (en) | Manufacture of semiconductor device | |
JPS55105344A (en) | Semiconductor device | |
JPS5312289A (en) | Production of semiconductor device | |
JPS5587429A (en) | Manufacture of semiconductor device | |
JPS5310265A (en) | Impurity diffusion method | |
JPS5619653A (en) | Bipolar cmos semiconductor device and manufacture thereof | |
JPS5637622A (en) | Manufacture of semiconductor device | |
JPS5574195A (en) | Manufacturing semiconductor laser | |
JPS5373081A (en) | Manufacture of mis-type semiconductor device | |
JPS5472985A (en) | Manufacture of integrated-circuit device | |
JPS5310286A (en) | Production of semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5350687A (en) | Production of semiconductor device | |
JPS54107276A (en) | Production of semiconductor device | |
JPS5687355A (en) | Semiconductor device | |
JPS5563879A (en) | Semiconductor device | |
JPS52147969A (en) | Manufacture of semiconductor device | |
JPS5244163A (en) | Process for productin of semiconductor element | |
JPS5732650A (en) | Semiconductor device | |
JPS5452464A (en) | Manufacture of boron phosphide semiconductor | |
JPS5491079A (en) | Manufacture of semiconductor device | |
JPS5516469A (en) | Method of producing semiconductor device | |
JPS5595356A (en) | Semiconductor device | |
JPS55153366A (en) | Semiconductor device |