JPS5586182A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5586182A
JPS5586182A JP16164078A JP16164078A JPS5586182A JP S5586182 A JPS5586182 A JP S5586182A JP 16164078 A JP16164078 A JP 16164078A JP 16164078 A JP16164078 A JP 16164078A JP S5586182 A JPS5586182 A JP S5586182A
Authority
JP
Japan
Prior art keywords
junction
layer
impurity
type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16164078A
Other languages
Japanese (ja)
Inventor
Akio Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16164078A priority Critical patent/JPS5586182A/en
Publication of JPS5586182A publication Critical patent/JPS5586182A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To make it possible to form a pn junction at the desired place by providing a diffusion restricting layer in the process of manufacturing a semiconductor device having a hetero junction and a pn junction.
CONSTITUTION: p-Type B semiconductor is grown on n-type A semiconductor n-A, and n-A/p-B junction is formed. In this case, a layer containing an impurity (p in this case) having a higher diffusion speed and a layer which does not contain the same impurity, that is, non-doped layer non-B are placed between two layers, n-A, and p-B. When p-B growth is operated under this condition, p-type impurity is diffused in n-A layer, and n-type impurity is diffused in p-B layer. Here, since the diffusion speed of the p-type impurity is higher, pn junction 1 is formed at the place deviated toward the n-A side from hetero boundary surface 2. Consequently, by controlling the thickness of layer non-B, it is possible to form pn junction 1 of any desired depth regardless of impurity concentration, growth temperature, and growth time.
COPYRIGHT: (C)1980,JPO&Japio
JP16164078A 1978-12-23 1978-12-23 Manufacture of semiconductor device Pending JPS5586182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16164078A JPS5586182A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16164078A JPS5586182A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5586182A true JPS5586182A (en) 1980-06-28

Family

ID=15739019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16164078A Pending JPS5586182A (en) 1978-12-23 1978-12-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5586182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164592A (en) * 1981-04-01 1982-10-09 Nec Corp Semicondutor photo detector
JPS59208888A (en) * 1983-05-13 1984-11-27 Nec Corp Compound semiconductor light emitting element
JPS61131582A (en) * 1984-11-30 1986-06-19 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS63140590A (en) * 1986-12-02 1988-06-13 Nec Corp Semiconductor laser device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164592A (en) * 1981-04-01 1982-10-09 Nec Corp Semicondutor photo detector
JPH0419714B2 (en) * 1981-04-01 1992-03-31 Nippon Electric Co
JPS59208888A (en) * 1983-05-13 1984-11-27 Nec Corp Compound semiconductor light emitting element
JPS61131582A (en) * 1984-11-30 1986-06-19 Sanyo Electric Co Ltd Manufacture of semiconductor laser
JPS63140590A (en) * 1986-12-02 1988-06-13 Nec Corp Semiconductor laser device

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