JPS55153366A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55153366A
JPS55153366A JP6200579A JP6200579A JPS55153366A JP S55153366 A JPS55153366 A JP S55153366A JP 6200579 A JP6200579 A JP 6200579A JP 6200579 A JP6200579 A JP 6200579A JP S55153366 A JPS55153366 A JP S55153366A
Authority
JP
Japan
Prior art keywords
layer
resistance value
epitaxial
region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6200579A
Other languages
Japanese (ja)
Inventor
Mamoru Fuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6200579A priority Critical patent/JPS55153366A/en
Publication of JPS55153366A publication Critical patent/JPS55153366A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To enable establishment of an optimum resistance value for epitaxial resist even when the grown condition forming the epitaxial layer varied widely by forming a donor or acceptor impurity added are in an epitaxial layer. CONSTITUTION:A P<+>-type buried layer 2 is formed on P-type Si substrate 1, and on the above layer an n-type epitaxial layer 3 is formed. At this time, upon measuring the specific resistance and the thickness of the layer 3, let it be supposed that the resistance value is staggered to the larger figure from the design value. In this case, a new semiconductor region 4 is formed by injecting donor impurities. After that, the acceptor impurities are diffused from the surface of the layer 13, a P<+>-type insulation isolated region 5 is formed. At this time, the region 4 is also diffused and a deeper semiconductor region 4 is formed. Hence, the resistance value of the epitaxial resistance region differs from the resistance value of the layer 3 and the resistance value becomes almost the same as the design value.
JP6200579A 1979-05-18 1979-05-18 Semiconductor device Pending JPS55153366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200579A JPS55153366A (en) 1979-05-18 1979-05-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200579A JPS55153366A (en) 1979-05-18 1979-05-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55153366A true JPS55153366A (en) 1980-11-29

Family

ID=13187597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200579A Pending JPS55153366A (en) 1979-05-18 1979-05-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55153366A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63194351A (en) * 1987-02-09 1988-08-11 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110389A (en) * 1977-03-09 1978-09-27 Oki Electric Ind Co Ltd Resistance forming method for semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110389A (en) * 1977-03-09 1978-09-27 Oki Electric Ind Co Ltd Resistance forming method for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63194351A (en) * 1987-02-09 1988-08-11 Mitsubishi Electric Corp Semiconductor device

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