JPS5310286A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5310286A
JPS5310286A JP8544476A JP8544476A JPS5310286A JP S5310286 A JPS5310286 A JP S5310286A JP 8544476 A JP8544476 A JP 8544476A JP 8544476 A JP8544476 A JP 8544476A JP S5310286 A JPS5310286 A JP S5310286A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
formation
diolating
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8544476A
Other languages
Japanese (ja)
Inventor
Minoru Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8544476A priority Critical patent/JPS5310286A/en
Publication of JPS5310286A publication Critical patent/JPS5310286A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve production cost and workability by beforehand making grooves of a required depth in dicing and diolating area forming regions of a substrate and performing the formation of the diffused layers of elements simultaneously with the diffusion formation of th isolating areas.
COPYRIGHT: (C)1978,JPO&Japio
JP8544476A 1976-07-16 1976-07-16 Production of semiconductor device Pending JPS5310286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8544476A JPS5310286A (en) 1976-07-16 1976-07-16 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8544476A JPS5310286A (en) 1976-07-16 1976-07-16 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5310286A true JPS5310286A (en) 1978-01-30

Family

ID=13859034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8544476A Pending JPS5310286A (en) 1976-07-16 1976-07-16 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5310286A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622576A (en) * 1984-10-22 1986-11-11 National Semiconductor Corporation Conductive non-metallic self-passivating non-corrodable IC bonding pads
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4622576A (en) * 1984-10-22 1986-11-11 National Semiconductor Corporation Conductive non-metallic self-passivating non-corrodable IC bonding pads
US5041896A (en) * 1989-07-06 1991-08-20 General Electric Company Symmetrical blocking high voltage semiconductor device and method of fabrication

Similar Documents

Publication Publication Date Title
JPS5324277A (en) Semiconductor devic e and its production
JPS5253673A (en) Device and production for semiconductor
JPS53124087A (en) Manufacture of semiconductor device
JPS5310286A (en) Production of semiconductor device
JPS5258483A (en) Junction type field effect semiconductor device and its production
JPS5379378A (en) Semoconductor davice and its production
JPS5310265A (en) Impurity diffusion method
JPS5228879A (en) Semiconductor device and method for its production
JPS533075A (en) Production of mos structure field effect semiconductor device
JPS5339081A (en) Semiconductor device
JPS531471A (en) Manufacture for semiconductor device
JPS5289083A (en) Production of semiconductor photoelectric converting element
JPS5329086A (en) Production of semiconductor device
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS5381090A (en) Production fo semiconductor device
JPS52123879A (en) Mos type semiconductor device and its production
JPS5365086A (en) Production of semiconductor device
JPS5373081A (en) Manufacture of mis-type semiconductor device
JPS53147487A (en) Semiconductor device
JPS5373990A (en) Semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS5372473A (en) Manufacture of mis type semicondctor device
JPS5235981A (en) Manufacturing method of semiconductor device
JPS53101977A (en) Diffusion method of inpurity to semiconductor substrate
JPS52179A (en) Method of fabricating semiconductor