JPS5310286A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5310286A JPS5310286A JP8544476A JP8544476A JPS5310286A JP S5310286 A JPS5310286 A JP S5310286A JP 8544476 A JP8544476 A JP 8544476A JP 8544476 A JP8544476 A JP 8544476A JP S5310286 A JPS5310286 A JP S5310286A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- formation
- diolating
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To improve production cost and workability by beforehand making grooves of a required depth in dicing and diolating area forming regions of a substrate and performing the formation of the diffused layers of elements simultaneously with the diffusion formation of th isolating areas.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8544476A JPS5310286A (en) | 1976-07-16 | 1976-07-16 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8544476A JPS5310286A (en) | 1976-07-16 | 1976-07-16 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5310286A true JPS5310286A (en) | 1978-01-30 |
Family
ID=13859034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8544476A Pending JPS5310286A (en) | 1976-07-16 | 1976-07-16 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5310286A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622576A (en) * | 1984-10-22 | 1986-11-11 | National Semiconductor Corporation | Conductive non-metallic self-passivating non-corrodable IC bonding pads |
US5041896A (en) * | 1989-07-06 | 1991-08-20 | General Electric Company | Symmetrical blocking high voltage semiconductor device and method of fabrication |
-
1976
- 1976-07-16 JP JP8544476A patent/JPS5310286A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4622576A (en) * | 1984-10-22 | 1986-11-11 | National Semiconductor Corporation | Conductive non-metallic self-passivating non-corrodable IC bonding pads |
US5041896A (en) * | 1989-07-06 | 1991-08-20 | General Electric Company | Symmetrical blocking high voltage semiconductor device and method of fabrication |
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