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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP15652476ApriorityCriticalpatent/JPS5381090A/en
Publication of JPS5381090ApublicationCriticalpatent/JPS5381090A/en
PURPOSE: To shorten impurity diffusion time and eliminate crystal defects at junction parts by beforehand forming recesses in isolation layer forming regions and forming isolation layers at the same time simultaneously with the formation of a base layer.