Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP8346976ApriorityCriticalpatent/JPS539478A/en
Publication of JPS539478ApublicationCriticalpatent/JPS539478A/en
PURPOSE: To evade the production of crystal defects occurring in contamination by making Si wafer surface to a non-undulating state then forming diffused layers.
COPYRIGHT: (C)1978,JPO&Japio
JP8346976A1976-07-151976-07-15Production of semiconductor device having pn junctions
PendingJPS539478A
(en)