JPS5314585A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5314585A JPS5314585A JP8817276A JP8817276A JPS5314585A JP S5314585 A JPS5314585 A JP S5314585A JP 8817276 A JP8817276 A JP 8817276A JP 8817276 A JP8817276 A JP 8817276A JP S5314585 A JPS5314585 A JP S5314585A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- time
- impurity
- integration
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To reduce diffusion time and increase the density of integration by using Ga as an impurity at the time of forming a PN junction isolating layer of a semiconductor device.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8817276A JPS5314585A (en) | 1976-07-26 | 1976-07-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8817276A JPS5314585A (en) | 1976-07-26 | 1976-07-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5314585A true JPS5314585A (en) | 1978-02-09 |
Family
ID=13935486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8817276A Pending JPS5314585A (en) | 1976-07-26 | 1976-07-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5314585A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60139408A (en) * | 1983-12-10 | 1985-07-24 | シエル・インタ−ナショネイル・リサ−チ・マ−チャッピイ・ベ−・ウィ | Expanded synthetic resin granule and application thereof |
US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
-
1976
- 1976-07-26 JP JP8817276A patent/JPS5314585A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60139408A (en) * | 1983-12-10 | 1985-07-24 | シエル・インタ−ナショネイル・リサ−チ・マ−チャッピイ・ベ−・ウィ | Expanded synthetic resin granule and application thereof |
US5086004A (en) * | 1988-03-14 | 1992-02-04 | Polaroid Corporation | Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer |
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