JPS5314585A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5314585A
JPS5314585A JP8817276A JP8817276A JPS5314585A JP S5314585 A JPS5314585 A JP S5314585A JP 8817276 A JP8817276 A JP 8817276A JP 8817276 A JP8817276 A JP 8817276A JP S5314585 A JPS5314585 A JP S5314585A
Authority
JP
Japan
Prior art keywords
semiconductor device
time
impurity
integration
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8817276A
Other languages
Japanese (ja)
Inventor
Manabu Matsuzawa
Masayoshi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8817276A priority Critical patent/JPS5314585A/en
Publication of JPS5314585A publication Critical patent/JPS5314585A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce diffusion time and increase the density of integration by using Ga as an impurity at the time of forming a PN junction isolating layer of a semiconductor device.
COPYRIGHT: (C)1978,JPO&Japio
JP8817276A 1976-07-26 1976-07-26 Semiconductor device Pending JPS5314585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8817276A JPS5314585A (en) 1976-07-26 1976-07-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8817276A JPS5314585A (en) 1976-07-26 1976-07-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5314585A true JPS5314585A (en) 1978-02-09

Family

ID=13935486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8817276A Pending JPS5314585A (en) 1976-07-26 1976-07-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5314585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60139408A (en) * 1983-12-10 1985-07-24 シエル・インタ−ナショネイル・リサ−チ・マ−チャッピイ・ベ−・ウィ Expanded synthetic resin granule and application thereof
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60139408A (en) * 1983-12-10 1985-07-24 シエル・インタ−ナショネイル・リサ−チ・マ−チャッピイ・ベ−・ウィ Expanded synthetic resin granule and application thereof
US5086004A (en) * 1988-03-14 1992-02-04 Polaroid Corporation Isolation of layered P-N junctions by diffusion to semi-insulating substrate and implantation of top layer

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