JPS5258483A - Junction type field effect semiconductor device and its production - Google Patents

Junction type field effect semiconductor device and its production

Info

Publication number
JPS5258483A
JPS5258483A JP13405575A JP13405575A JPS5258483A JP S5258483 A JPS5258483 A JP S5258483A JP 13405575 A JP13405575 A JP 13405575A JP 13405575 A JP13405575 A JP 13405575A JP S5258483 A JPS5258483 A JP S5258483A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
field effect
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13405575A
Other languages
Japanese (ja)
Inventor
Kazuo Hoya
Naonobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13405575A priority Critical patent/JPS5258483A/en
Publication of JPS5258483A publication Critical patent/JPS5258483A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the scale of integration of J-FETs and reduce the variation in impurity concentration, by forming a gate region by impurity diffusion in deep grooves formed in an Si substrate through the use of anisotropic etching.
COPYRIGHT: (C)1977,JPO&Japio
JP13405575A 1975-11-10 1975-11-10 Junction type field effect semiconductor device and its production Pending JPS5258483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13405575A JPS5258483A (en) 1975-11-10 1975-11-10 Junction type field effect semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13405575A JPS5258483A (en) 1975-11-10 1975-11-10 Junction type field effect semiconductor device and its production

Publications (1)

Publication Number Publication Date
JPS5258483A true JPS5258483A (en) 1977-05-13

Family

ID=15119297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13405575A Pending JPS5258483A (en) 1975-11-10 1975-11-10 Junction type field effect semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5258483A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491074A (en) * 1977-12-28 1979-07-19 Seiko Instr & Electronics Ltd Semiconductor device
JPS55134961A (en) * 1979-04-10 1980-10-21 Seiko Instr & Electronics Ltd Semiconductor device and its preparation
JPS55154777A (en) * 1979-05-21 1980-12-02 Seiko Instr & Electronics Ltd Manufacture of stepwise type semiconductor device
JPS5635457A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Integrated circuit device and manufacture thereof
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
US6037618A (en) * 1998-02-17 2000-03-14 Linear Integrated Systems, Inc. Intergrated field effect transistor device for high power and voltage amplification of RF signals

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491074A (en) * 1977-12-28 1979-07-19 Seiko Instr & Electronics Ltd Semiconductor device
JPS55134961A (en) * 1979-04-10 1980-10-21 Seiko Instr & Electronics Ltd Semiconductor device and its preparation
JPS55154777A (en) * 1979-05-21 1980-12-02 Seiko Instr & Electronics Ltd Manufacture of stepwise type semiconductor device
JPS6212675B2 (en) * 1979-05-21 1987-03-19 Seiko Denshi Kogyo Kk
JPS5635457A (en) * 1979-08-30 1981-04-08 Seiko Instr & Electronics Ltd Integrated circuit device and manufacture thereof
JPH0412029B2 (en) * 1979-08-30 1992-03-03 Seiko Instr & Electronics
JPS5666076A (en) * 1979-11-02 1981-06-04 Tohoku Metal Ind Ltd Semiconductor device
US6037618A (en) * 1998-02-17 2000-03-14 Linear Integrated Systems, Inc. Intergrated field effect transistor device for high power and voltage amplification of RF signals

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