JPS5587429A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587429A
JPS5587429A JP16315778A JP16315778A JPS5587429A JP S5587429 A JPS5587429 A JP S5587429A JP 16315778 A JP16315778 A JP 16315778A JP 16315778 A JP16315778 A JP 16315778A JP S5587429 A JPS5587429 A JP S5587429A
Authority
JP
Japan
Prior art keywords
layer
injecting
ions
substrate
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16315778A
Other languages
Japanese (ja)
Other versions
JPS6142854B2 (en
Inventor
Shigeru Tatsuta
Teruo Sakurai
Toshio Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16315778A priority Critical patent/JPS5587429A/en
Publication of JPS5587429A publication Critical patent/JPS5587429A/en
Publication of JPS6142854B2 publication Critical patent/JPS6142854B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a pn-junction whose life time is controlled, by forming a non- crystalline layer having a specified thickness by injecting Si ions in a one-conductive monocrystal layer which is grown on an Si monocrystal substrate, then, injecting reverse-conductive impurity ions, thereafter performing heat treatment.
CONSTITUTION: An n-type layer 2 is epitaxially grown on an n+ Si substrate 1, and a non-crystalline layer 3 reaching a specified depth is yielded on the layer 2 by injecting Si+ ions. Then, a p-type region 4 is formed on the surface of the layer 3 by injecting BF2 + ions, heat treatment is performed in N2 atmosphere at 450W600°C for about 100 minutes, and a crystal-lattice defect layer 5 is remained near the boundary between layers 2 and 3. Thereafter, a switching diode is made by using the substrate obtained by this method. A switching speed of 10μsec with errors of about 20% can be obtained owing to the presence of the defect layer 5, and dispersion in speed is very small compared with that of normal Au diffusion.
COPYRIGHT: (C)1980,JPO&Japio
JP16315778A 1978-12-26 1978-12-26 Manufacture of semiconductor device Granted JPS5587429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16315778A JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16315778A JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587429A true JPS5587429A (en) 1980-07-02
JPS6142854B2 JPS6142854B2 (en) 1986-09-24

Family

ID=15768304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16315778A Granted JPS5587429A (en) 1978-12-26 1978-12-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587429A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (en) * 1982-05-31 1983-12-06 Toshiba Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPS61142738A (en) * 1984-12-17 1986-06-30 Toshiba Corp Method for implanting ions in single crystal substrate
JPH0235715A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02306622A (en) * 1989-05-22 1990-12-20 Oki Electric Ind Co Ltd Semiconductor device and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0217856U (en) * 1988-07-22 1990-02-06

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (en) * 1982-05-31 1983-12-06 Toshiba Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPS61142738A (en) * 1984-12-17 1986-06-30 Toshiba Corp Method for implanting ions in single crystal substrate
JPH0235715A (en) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPH02306622A (en) * 1989-05-22 1990-12-20 Oki Electric Ind Co Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS6142854B2 (en) 1986-09-24

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