JPS5538082A - Formation for buried layer of semiconductor device - Google Patents

Formation for buried layer of semiconductor device

Info

Publication number
JPS5538082A
JPS5538082A JP11206578A JP11206578A JPS5538082A JP S5538082 A JPS5538082 A JP S5538082A JP 11206578 A JP11206578 A JP 11206578A JP 11206578 A JP11206578 A JP 11206578A JP S5538082 A JPS5538082 A JP S5538082A
Authority
JP
Japan
Prior art keywords
film
ions
oxide film
buried layer
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11206578A
Other languages
Japanese (ja)
Other versions
JPS6129538B2 (en
Inventor
Tsuneo Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11206578A priority Critical patent/JPS5538082A/en
Publication of JPS5538082A publication Critical patent/JPS5538082A/en
Publication of JPS6129538B2 publication Critical patent/JPS6129538B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To form a buried layer with a uniform thickness and a low seat resistance by enabling impurities to be diffused easily on the surface part of a substrate through an oxide film with ions injected on a diffusion layer.
CONSTITUTION: N-type impurity ions I such as arsenic ions, antimony ions, etc. are injected on the oxide film 8 formed in the window of an insulated film 2 on a P-type silicon substrate 1. After coated film 4 is formed, an N+-type diffusion layer 5b is made up by heat treatment, an insulated film 2, a coated film 4, an oxide film 8 are removed and then an N-type semiconductor layer 6 is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP11206578A 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device Granted JPS5538082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11206578A JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5538082A true JPS5538082A (en) 1980-03-17
JPS6129538B2 JPS6129538B2 (en) 1986-07-07

Family

ID=14577164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11206578A Granted JPS5538082A (en) 1978-09-11 1978-09-11 Formation for buried layer of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538082A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162325A (en) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62198120A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Manufacture of semiconductor device
KR100393962B1 (en) * 1996-12-26 2003-11-17 주식회사 하이닉스반도체 Method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162325A (en) * 1986-01-13 1987-07-18 Sanyo Electric Co Ltd Manufacture of semiconductor device
JPS62198120A (en) * 1986-02-25 1987-09-01 Sanyo Electric Co Ltd Manufacture of semiconductor device
KR100393962B1 (en) * 1996-12-26 2003-11-17 주식회사 하이닉스반도체 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6129538B2 (en) 1986-07-07

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
JPS5586151A (en) Manufacture of semiconductor integrated circuit
JPS5538082A (en) Formation for buried layer of semiconductor device
JPS5312289A (en) Production of semiconductor device
JPS5583271A (en) Semiconductor device
JPS54109765A (en) Manufacture of semiconductor device
JPS5660055A (en) Manufacture of semiconductor device
JPS5780768A (en) Semiconductor device
JPS54107270A (en) Semiconductor device and its production
JPS5559778A (en) Method of fabricating semiconductor device
JPS5339081A (en) Semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS5492183A (en) Manufacture of mis type semiconductor device
JPS5680158A (en) Semiconductor device
JPS5574181A (en) Preparing junction type field effect transistor
JPS54122092A (en) Manufacture of semiconductor integrated circuit
JPS5559738A (en) Preparation of semiconductor device
JPS5346272A (en) Impurity diffusion method
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5271974A (en) Production of semiconductor device
JPS5472985A (en) Manufacture of integrated-circuit device
JPS57194546A (en) Semiconductor device and manufacture thereof
JPS56126960A (en) Manufacture of semiconductor device
JPS54152874A (en) Semiconductor device and its manufacture
JPS5580334A (en) Manufacture of semiconductor device