JPS5538082A - Formation for buried layer of semiconductor device - Google Patents
Formation for buried layer of semiconductor deviceInfo
- Publication number
- JPS5538082A JPS5538082A JP11206578A JP11206578A JPS5538082A JP S5538082 A JPS5538082 A JP S5538082A JP 11206578 A JP11206578 A JP 11206578A JP 11206578 A JP11206578 A JP 11206578A JP S5538082 A JPS5538082 A JP S5538082A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ions
- oxide film
- buried layer
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form a buried layer with a uniform thickness and a low seat resistance by enabling impurities to be diffused easily on the surface part of a substrate through an oxide film with ions injected on a diffusion layer.
CONSTITUTION: N-type impurity ions I such as arsenic ions, antimony ions, etc. are injected on the oxide film 8 formed in the window of an insulated film 2 on a P-type silicon substrate 1. After coated film 4 is formed, an N+-type diffusion layer 5b is made up by heat treatment, an insulated film 2, a coated film 4, an oxide film 8 are removed and then an N-type semiconductor layer 6 is formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11206578A JPS5538082A (en) | 1978-09-11 | 1978-09-11 | Formation for buried layer of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11206578A JPS5538082A (en) | 1978-09-11 | 1978-09-11 | Formation for buried layer of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5538082A true JPS5538082A (en) | 1980-03-17 |
JPS6129538B2 JPS6129538B2 (en) | 1986-07-07 |
Family
ID=14577164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11206578A Granted JPS5538082A (en) | 1978-09-11 | 1978-09-11 | Formation for buried layer of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538082A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62162325A (en) * | 1986-01-13 | 1987-07-18 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
JPS62198120A (en) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
KR100393962B1 (en) * | 1996-12-26 | 2003-11-17 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
-
1978
- 1978-09-11 JP JP11206578A patent/JPS5538082A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62162325A (en) * | 1986-01-13 | 1987-07-18 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
JPS62198120A (en) * | 1986-02-25 | 1987-09-01 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
KR100393962B1 (en) * | 1996-12-26 | 2003-11-17 | 주식회사 하이닉스반도체 | Method for manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6129538B2 (en) | 1986-07-07 |
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