JPS5680158A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5680158A
JPS5680158A JP15832679A JP15832679A JPS5680158A JP S5680158 A JPS5680158 A JP S5680158A JP 15832679 A JP15832679 A JP 15832679A JP 15832679 A JP15832679 A JP 15832679A JP S5680158 A JPS5680158 A JP S5680158A
Authority
JP
Japan
Prior art keywords
type
layer
resistor
region
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15832679A
Other languages
Japanese (ja)
Other versions
JPS6248902B2 (en
Inventor
Tsutomu Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15832679A priority Critical patent/JPS5680158A/en
Publication of JPS5680158A publication Critical patent/JPS5680158A/en
Publication of JPS6248902B2 publication Critical patent/JPS6248902B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a polycrystalline semiconductor resistance device having two different layer resistances by only one ion-implantation, by forming on a high concentration impurity layer of the first conductivity type on the semiconductor substrate surface a resistor layer of the second conductivity type and diffusing the impurity of the first conductivity type into said resistor. CONSTITUTION:An opening is made in an oxide film 22 on a P type semicondutor substrate 21 in order to form an N<+> type high-impurity concentration diffused region 26. Then, a polycrystalline semiconductor layer 23 is provided by vapor growth, and after the region not used as a resistor is formed into an oxide film 24 by thermal oxidation, P type impurities are injected by ion implantation. Then by heat treatment, from the N<+> high-impurity concentration diffused region 26 in the semiconductor substrate N type impurities are diffused into the polycruytalline semiconductor layer 23 to form an N type region 27. Thus, the film thickness of the resistor layer is allowed to be thinner by the thickness of the N type region 27, so that a high layer-resistance can be obtained. Therefore, using this together with the ordinary polycrystalline resistor permits a wide variety of resistance values to be obtained without increasing the number of process.
JP15832679A 1979-12-06 1979-12-06 Semiconductor device Granted JPS5680158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15832679A JPS5680158A (en) 1979-12-06 1979-12-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15832679A JPS5680158A (en) 1979-12-06 1979-12-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5680158A true JPS5680158A (en) 1981-07-01
JPS6248902B2 JPS6248902B2 (en) 1987-10-16

Family

ID=15669188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15832679A Granted JPS5680158A (en) 1979-12-06 1979-12-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5680158A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145926A2 (en) * 1983-11-15 1985-06-26 International Business Machines Corporation Polysilicon resistors compensated with double ion-implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0145926A2 (en) * 1983-11-15 1985-06-26 International Business Machines Corporation Polysilicon resistors compensated with double ion-implantation

Also Published As

Publication number Publication date
JPS6248902B2 (en) 1987-10-16

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