JPS5680158A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5680158A JPS5680158A JP15832679A JP15832679A JPS5680158A JP S5680158 A JPS5680158 A JP S5680158A JP 15832679 A JP15832679 A JP 15832679A JP 15832679 A JP15832679 A JP 15832679A JP S5680158 A JPS5680158 A JP S5680158A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- resistor
- region
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a polycrystalline semiconductor resistance device having two different layer resistances by only one ion-implantation, by forming on a high concentration impurity layer of the first conductivity type on the semiconductor substrate surface a resistor layer of the second conductivity type and diffusing the impurity of the first conductivity type into said resistor. CONSTITUTION:An opening is made in an oxide film 22 on a P type semicondutor substrate 21 in order to form an N<+> type high-impurity concentration diffused region 26. Then, a polycrystalline semiconductor layer 23 is provided by vapor growth, and after the region not used as a resistor is formed into an oxide film 24 by thermal oxidation, P type impurities are injected by ion implantation. Then by heat treatment, from the N<+> high-impurity concentration diffused region 26 in the semiconductor substrate N type impurities are diffused into the polycruytalline semiconductor layer 23 to form an N type region 27. Thus, the film thickness of the resistor layer is allowed to be thinner by the thickness of the N type region 27, so that a high layer-resistance can be obtained. Therefore, using this together with the ordinary polycrystalline resistor permits a wide variety of resistance values to be obtained without increasing the number of process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15832679A JPS5680158A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15832679A JPS5680158A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5680158A true JPS5680158A (en) | 1981-07-01 |
JPS6248902B2 JPS6248902B2 (en) | 1987-10-16 |
Family
ID=15669188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15832679A Granted JPS5680158A (en) | 1979-12-06 | 1979-12-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5680158A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0145926A2 (en) * | 1983-11-15 | 1985-06-26 | International Business Machines Corporation | Polysilicon resistors compensated with double ion-implantation |
-
1979
- 1979-12-06 JP JP15832679A patent/JPS5680158A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0145926A2 (en) * | 1983-11-15 | 1985-06-26 | International Business Machines Corporation | Polysilicon resistors compensated with double ion-implantation |
Also Published As
Publication number | Publication date |
---|---|
JPS6248902B2 (en) | 1987-10-16 |
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