JPS5724536A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5724536A
JPS5724536A JP9924880A JP9924880A JPS5724536A JP S5724536 A JPS5724536 A JP S5724536A JP 9924880 A JP9924880 A JP 9924880A JP 9924880 A JP9924880 A JP 9924880A JP S5724536 A JPS5724536 A JP S5724536A
Authority
JP
Japan
Prior art keywords
region
film
oxide film
single crystalline
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9924880A
Other languages
Japanese (ja)
Other versions
JPS5948532B2 (en
Inventor
Hideaki Sadamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55099248A priority Critical patent/JPS5948532B2/en
Publication of JPS5724536A publication Critical patent/JPS5724536A/en
Publication of JPS5948532B2 publication Critical patent/JPS5948532B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Abstract

PURPOSE:To reduce the thickness in the form of a thin film and increase the speed and density of a transistor by a method wherein amorphous Si is allowed to grow on an insulating film containing impurities on a substrate and become single crystalline by means of laser irradiation, and then the impurities are made to diffuse in the single crystalline layer from the insulating film by giving heat treatment. CONSTITUTION:An oxide film 202 containing such impurities as As is formed on an amorphous or single crystalline substrate 201. The photoresist method is used to form a rectangular groove in the oxide film. Amorphous silicon 204 is allowed to grow, then. Next laser irradiation is employed to have the amorphous silicon single crystllized in order to form a single cyrstalline layer 204'. Heat treatment is added to the oxide film 202 so that As in the film is diffused in the single crystalline layer 204' to form a diffusion region 205 with low resistance and reduce the region to a collector region. Then an isolation region 206 between elements, a selective oxide film 208, a base region 209 and an emitter region 211 are formed in order to create a bypolar transistor. By so doing, it becomes possible to reduce collector resistance and the thickness of the film, and increase the speed and density of the transistor.
JP55099248A 1980-07-18 1980-07-18 Manufacturing method of semiconductor device Expired JPS5948532B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55099248A JPS5948532B2 (en) 1980-07-18 1980-07-18 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55099248A JPS5948532B2 (en) 1980-07-18 1980-07-18 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724536A true JPS5724536A (en) 1982-02-09
JPS5948532B2 JPS5948532B2 (en) 1984-11-27

Family

ID=14242394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55099248A Expired JPS5948532B2 (en) 1980-07-18 1980-07-18 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5948532B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2325342B (en) * 1997-05-12 2000-03-01 Lg Electronics Inc Method of crystallizing amorphous silicon layer and method of fabricating a thin film transistor
JP2005268441A (en) * 2004-03-17 2005-09-29 Seiko Epson Corp Method for manufacturing semiconductor film, method for manufacturing semiconductor device, integrated circuit, electric optical device and electronic equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2325342B (en) * 1997-05-12 2000-03-01 Lg Electronics Inc Method of crystallizing amorphous silicon layer and method of fabricating a thin film transistor
JP2005268441A (en) * 2004-03-17 2005-09-29 Seiko Epson Corp Method for manufacturing semiconductor film, method for manufacturing semiconductor device, integrated circuit, electric optical device and electronic equipment
JP4711042B2 (en) * 2004-03-17 2011-06-29 セイコーエプソン株式会社 Semiconductor film manufacturing method and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPS5948532B2 (en) 1984-11-27

Similar Documents

Publication Publication Date Title
US3664896A (en) Deposited silicon diffusion sources
JPS56135969A (en) Manufacture of semiconductor device
JPS5724536A (en) Preparation of semiconductor device
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS5727060A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5793525A (en) Manufacture of semiconductor device
JPS57199236A (en) Manufacture of oxide film isolation semiconductor device
JPS5687339A (en) Manufacture of semiconductor device
JPS5272162A (en) Production of semiconductor device
JPS5583260A (en) Semiconductor device and method of fabricating the same
JPS567467A (en) Semiconductor memory device
JPS5796567A (en) Manufacture of semiconductor device
JPS55146969A (en) Manufacture of semiconductor device
JPS562666A (en) Manufacture of semiconductor device
JPS5754366A (en) Manufacture of semiconductor device
JPS5544741A (en) Manufacture of semiconductor device
JPS5621366A (en) Manufacture of semiconductor device
JPS5472985A (en) Manufacture of integrated-circuit device
JPS577155A (en) Preparation of semiconductor device
JPS5779638A (en) Manufacture of semiconductor device
JPS56142631A (en) Manufacture of semiconductor device
JPS5656675A (en) Semiconductor device on insulated substrate
JPS54126482A (en) Non-volatile semiconductor device
JPS51120666A (en) Semiconductor device manufacturing method