JPS55146969A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55146969A
JPS55146969A JP5348879A JP5348879A JPS55146969A JP S55146969 A JPS55146969 A JP S55146969A JP 5348879 A JP5348879 A JP 5348879A JP 5348879 A JP5348879 A JP 5348879A JP S55146969 A JPS55146969 A JP S55146969A
Authority
JP
Japan
Prior art keywords
substrate
region
order
entire surface
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5348879A
Other languages
Japanese (ja)
Inventor
Sumio Nishida
Yoshikazu Yanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5348879A priority Critical patent/JPS55146969A/en
Publication of JPS55146969A publication Critical patent/JPS55146969A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the switching characteristic by forming the base and emitter regions in the semiconductor substrate, which is to be the collector, by a diffusion method, by applying radiation to the entire surface of the substrate in order to increase the switching speed and by annealing only the base region by means of a laser beam. CONSTITUTION:Impurity is selectively diffused in the surface of the Si substrate, which is to be the collector, on making the oxide film 2 a mask in order to form the base region 3 and the emitter region 4 that is in the region 3., Next, the radiations such as gamma-rays and beta-rays are applied to the entire surface of the substrate by using a radiocative isotope RI such as cobalt 60 in order to increase the switching speed in the collector side. After this, polycrystal Si layer 5 is put on the entire surface of the substrate, only the layer 5 on the base region 3 is removed from the substrate by a photoetching process, a pulse laser beam is applied to the region 3 through the exposed film 2 for an extremely short time on the order of 10 nanoseconds to anneal the region 3. In this way, the switching characteristic can be improved without the lowering of both hFE and noise characteristics.
JP5348879A 1979-05-02 1979-05-02 Manufacture of semiconductor device Pending JPS55146969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5348879A JPS55146969A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5348879A JPS55146969A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55146969A true JPS55146969A (en) 1980-11-15

Family

ID=12944218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5348879A Pending JPS55146969A (en) 1979-05-02 1979-05-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55146969A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817678A (en) * 1981-07-24 1983-02-01 Toshiba Corp Manufacture of semiconductor device
JPS6449235A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817678A (en) * 1981-07-24 1983-02-01 Toshiba Corp Manufacture of semiconductor device
JPS6449235A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device

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