JPS5727060A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5727060A JPS5727060A JP10225280A JP10225280A JPS5727060A JP S5727060 A JPS5727060 A JP S5727060A JP 10225280 A JP10225280 A JP 10225280A JP 10225280 A JP10225280 A JP 10225280A JP S5727060 A JPS5727060 A JP S5727060A
- Authority
- JP
- Japan
- Prior art keywords
- type
- emitter
- layer
- impurities
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain short emitter structure in excellent controllability and reproducibility by a method wherein PNP three layer structure is formed, and N type impurities are deposited in an N emitter region and P type impurities in an emitter short-circuiting section except the emitter region while the impurities are thermally diffused. CONSTITUTION:An N type base layer 11, a P type base layer 12 and a P type emitter layer 13 are shaped by diffusing gallium from two sides of an N type silicon substrate. The surface of the P type base layer 12 is etched until the concentration of impurities on the surface reaches predetermined value. An SiO2 film is formed, and a high concentration diffusion region 15 of phosphorus is shaped through selective diffusion. The SiO2 film 14 is removed, gallium is deposited and driven in, and the N type emitter layer 15' and a P type diffusion layer 16 are molded at the same time. Accordingly, the semiconductor device can be manufactured in excellent controllability and reproducibility bacause the N emitter layer 15' and the P type emitter short-circuiting section 16 are formed through once diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10225280A JPS5727060A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10225280A JPS5727060A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5727060A true JPS5727060A (en) | 1982-02-13 |
Family
ID=14322400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10225280A Pending JPS5727060A (en) | 1980-07-25 | 1980-07-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5727060A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111987A (en) * | 1983-11-18 | 1984-06-28 | 株式会社日立製作所 | Manufacture of composite sintered body |
| JPS59225566A (en) * | 1983-06-06 | 1984-12-18 | Meidensha Electric Mfg Co Ltd | Manufacture of semiconductor element |
| JPS6323394A (en) * | 1987-03-20 | 1988-01-30 | 株式会社日立製作所 | Manufacture of composite sintered unit |
| JP2019169563A (en) * | 2018-03-22 | 2019-10-03 | 新電元工業株式会社 | Method for manufacturing semiconductor device and semiconductor device |
-
1980
- 1980-07-25 JP JP10225280A patent/JPS5727060A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225566A (en) * | 1983-06-06 | 1984-12-18 | Meidensha Electric Mfg Co Ltd | Manufacture of semiconductor element |
| JPS59111987A (en) * | 1983-11-18 | 1984-06-28 | 株式会社日立製作所 | Manufacture of composite sintered body |
| JPS6117656B2 (en) * | 1983-11-18 | 1986-05-08 | Hitachi Ltd | |
| JPS6323394A (en) * | 1987-03-20 | 1988-01-30 | 株式会社日立製作所 | Manufacture of composite sintered unit |
| JP2019169563A (en) * | 2018-03-22 | 2019-10-03 | 新電元工業株式会社 | Method for manufacturing semiconductor device and semiconductor device |
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