JPS5776873A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5776873A JPS5776873A JP15259580A JP15259580A JPS5776873A JP S5776873 A JPS5776873 A JP S5776873A JP 15259580 A JP15259580 A JP 15259580A JP 15259580 A JP15259580 A JP 15259580A JP S5776873 A JPS5776873 A JP S5776873A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- mask
- oxide film
- covered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Abstract
PURPOSE:To obtain a semiconductor device with small dimensions and a low base resistance without deteriorating its characteristics by a method wherein a high density base region and an emitter region are formed by self-alignment. CONSTITUTION:An N type Si substrate 11 is covered by a silicon oxide film 12 and the surface of the oxide film 12 is covered by a silicon nitride film 13. Then a polycrystalline silicon film 14 is selectively formed and using this silicon film 14 as a mask the silicon nitride film 13 is side-etched. Ionized boron is injected using the polycrystalline silicon film 14 as a mask and a high density base region 15 is formed onthe silicon substrate 11. Then after the polycrystalline silicon film 14 is removed, ionized boron is injected and a base region 16 is formed. Finally using the silicon nitride film 13 as a mask the surface of the silicon substrate 11 is covered with a silicon oxide film 17 and the silicon nitride film 13 and the silicon oxide film 12 are removed and phosphorus is added, so that an emitter region 19 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15259580A JPS5776873A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15259580A JPS5776873A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5776873A true JPS5776873A (en) | 1982-05-14 |
Family
ID=15543861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15259580A Pending JPS5776873A (en) | 1980-10-30 | 1980-10-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776873A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149055A (en) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing bipolar planar transistor |
-
1980
- 1980-10-30 JP JP15259580A patent/JPS5776873A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59149055A (en) * | 1983-02-12 | 1984-08-25 | アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド | Method of producing bipolar planar transistor |
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