JPS5745256A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745256A
JPS5745256A JP12076580A JP12076580A JPS5745256A JP S5745256 A JPS5745256 A JP S5745256A JP 12076580 A JP12076580 A JP 12076580A JP 12076580 A JP12076580 A JP 12076580A JP S5745256 A JPS5745256 A JP S5745256A
Authority
JP
Japan
Prior art keywords
etching
window
electrode window
type
sio2 film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12076580A
Other languages
Japanese (ja)
Other versions
JPH0115145B2 (en
Inventor
Tadashi Kirisako
Ryoji Abe
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12076580A priority Critical patent/JPS5745256A/en
Publication of JPS5745256A publication Critical patent/JPS5745256A/en
Publication of JPH0115145B2 publication Critical patent/JPH0115145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To each a polycrystal silicon layer and a SiO2 film by using the same etching-mask, and to form a side surface of an electrode window in a stepped shape by utilizing the presence or absence of the directional property of etching. CONSTITUTION:The semiconductor device in which a P type Si substrate 11 an N type collector layer 12, a P type base region 15, an N<+> type emitter region 21, a SiO2 film 13 with a base electrode window 16, an emitter electrode window 17 and a SBD electrode window 18 not penetrated, and a polycrystal cilicon layer 19 are formed is shaped through conventional technique, a photo-resist 22 is molded and an etching window 23 for the electrode window is formed. The polycrystal silicon layer 19 in the etching window 23 is removed through an etching method having no directional property so that the desired side-etching region 24 is shaped. The SiO2 film 13 is ethced vertically through an etching method havin directional property and the window is penetrated, and a SBD electrode window 25, a side surface thereof is stepped, is formed.
JP12076580A 1980-09-01 1980-09-01 Manufacture of semiconductor device Granted JPS5745256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12076580A JPS5745256A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12076580A JPS5745256A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745256A true JPS5745256A (en) 1982-03-15
JPH0115145B2 JPH0115145B2 (en) 1989-03-15

Family

ID=14794437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12076580A Granted JPS5745256A (en) 1980-09-01 1980-09-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745256A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4715930A (en) * 1985-11-15 1987-12-29 Commissariat A L'energie Atomique Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof
US9097269B2 (en) 2012-06-04 2015-08-04 Fisher Controls International, Llc Bracket assemblies for use with actuators
US9945701B2 (en) 2015-07-17 2018-04-17 Fisher Controls International Llc Actuator bracket having a sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4715930A (en) * 1985-11-15 1987-12-29 Commissariat A L'energie Atomique Process for producing by sloping etching a thin film transistor with a self-aligned gate with respect to the drain and source thereof
US9097269B2 (en) 2012-06-04 2015-08-04 Fisher Controls International, Llc Bracket assemblies for use with actuators
US9945701B2 (en) 2015-07-17 2018-04-17 Fisher Controls International Llc Actuator bracket having a sensor
US10330504B2 (en) 2015-07-17 2019-06-25 Fisher Controls International Llc Actuator bracket having a sensor
US11181401B2 (en) 2015-07-17 2021-11-23 Fisher Controls International Llc Actuator bracket having a sensor

Also Published As

Publication number Publication date
JPH0115145B2 (en) 1989-03-15

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