JPS572564A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS572564A JPS572564A JP7563080A JP7563080A JPS572564A JP S572564 A JPS572564 A JP S572564A JP 7563080 A JP7563080 A JP 7563080A JP 7563080 A JP7563080 A JP 7563080A JP S572564 A JPS572564 A JP S572564A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- groove
- withstand voltage
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Abstract
PURPOSE:To obtain a withstand voltage of a semiconductor device, the voltage thereof is in the vicinity of an ideal withstand voltage by relatively increasing impurity density in the prescribed distance from a p-n junction exposed on the inner surface of a groove of a moat structure and setting the impurity in opposite symbol in the groove surface farther from the p-n junction. CONSTITUTION:Phosphorus is diffused on the surface of a silicon wafer to form a high density n type collector layer 2, boron is then diffused to form a p type base layer 3, an n type emitter layer 4 and an n type layer 13 are formed therein, and a groove 7 is formed. An SiO2 film 92 is formed on the inner surface of the groove 7, a window is opened at the p-n junction side, and a glass film 91 is bonded. The impurity density is relatively increased in the prescribed distance from the exposed surface of the p-n junction, and the impurity density is set at zero or at reverse symbol at the groove surface farther from the p-n junction. Thus, the withstand voltage which is in the vicinity of an ideal withstand voltage can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7563080A JPS572564A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7563080A JPS572564A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS572564A true JPS572564A (en) | 1982-01-07 |
Family
ID=13581748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7563080A Pending JPS572564A (en) | 1980-06-06 | 1980-06-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS572564A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186629A (en) * | 1988-01-14 | 1989-07-26 | Rohm Co Ltd | Manufacture of mesa-type semiconductor device |
-
1980
- 1980-06-06 JP JP7563080A patent/JPS572564A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186629A (en) * | 1988-01-14 | 1989-07-26 | Rohm Co Ltd | Manufacture of mesa-type semiconductor device |
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