JPS5735369A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5735369A
JPS5735369A JP11195180A JP11195180A JPS5735369A JP S5735369 A JPS5735369 A JP S5735369A JP 11195180 A JP11195180 A JP 11195180A JP 11195180 A JP11195180 A JP 11195180A JP S5735369 A JPS5735369 A JP S5735369A
Authority
JP
Japan
Prior art keywords
layer
semiconductor substrate
type
forming
embeded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11195180A
Other languages
Japanese (ja)
Inventor
Masahiro Sekine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11195180A priority Critical patent/JPS5735369A/en
Publication of JPS5735369A publication Critical patent/JPS5735369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure Control For Cameras (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the leak current due to wiring, by forming a bipolar IC region on one main surface of a semiconductor substrate and forming a photodiode region on the other surface. CONSTITUTION:A P type diffused layer 2 is formed by diffusing boron in the main surface of the semiconductor substrate 1a which is polished to obtain a mirror surface. Then, an N type embeded layer 3 is formed and an N type epitaxial layer 4 is formed on the semiconductor substrate 1a including embeded layer 3. Thereafter, an SiO2 film is formed on the epitaxial layer 4, and P type separating layer 6 is formed. Then, the back surface of the semiconductor substrate 1a is etched out, and mirror finishing is performed.
JP11195180A 1980-08-11 1980-08-11 Semiconductor device Pending JPS5735369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11195180A JPS5735369A (en) 1980-08-11 1980-08-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11195180A JPS5735369A (en) 1980-08-11 1980-08-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5735369A true JPS5735369A (en) 1982-02-25

Family

ID=14574233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11195180A Pending JPS5735369A (en) 1980-08-11 1980-08-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5735369A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201326A (en) * 1986-02-28 1987-09-05 Canon Inc Photometric device
EP0537514A2 (en) * 1991-10-14 1993-04-21 Mitsubishi Denki Kabushiki Kaisha Optoelectronic integrated circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093586A (en) * 1973-12-19 1975-07-25
JPS50125626A (en) * 1974-03-19 1975-10-02
JPS50125692A (en) * 1974-03-20 1975-10-02
JPS54139497A (en) * 1978-04-17 1979-10-29 Ibm Pin photodiode
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093586A (en) * 1973-12-19 1975-07-25
JPS50125626A (en) * 1974-03-19 1975-10-02
JPS50125692A (en) * 1974-03-20 1975-10-02
JPS54139497A (en) * 1978-04-17 1979-10-29 Ibm Pin photodiode
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62201326A (en) * 1986-02-28 1987-09-05 Canon Inc Photometric device
JPH0549053B2 (en) * 1986-02-28 1993-07-23 Canon Kk
EP0537514A2 (en) * 1991-10-14 1993-04-21 Mitsubishi Denki Kabushiki Kaisha Optoelectronic integrated circuit
US5357121A (en) * 1991-10-14 1994-10-18 Mitsubishi Denki Kabushiki Kaisha Optoelectronic integrated circuit

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