JPS57104279A - Photo isolator - Google Patents

Photo isolator

Info

Publication number
JPS57104279A
JPS57104279A JP17981280A JP17981280A JPS57104279A JP S57104279 A JPS57104279 A JP S57104279A JP 17981280 A JP17981280 A JP 17981280A JP 17981280 A JP17981280 A JP 17981280A JP S57104279 A JPS57104279 A JP S57104279A
Authority
JP
Japan
Prior art keywords
light
junction
substrate
layer
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17981280A
Other languages
Japanese (ja)
Inventor
Shinji Emori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17981280A priority Critical patent/JPS57104279A/en
Publication of JPS57104279A publication Critical patent/JPS57104279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To integrate photoisolators by a method wherein a light emitting region exposed a P-N junction and a light receving region exposed a P-N junction are separately provided at an electrically floated semiconductor region and both of the regions are coupled by a phototransfer layer having a photo reflective layer. CONSTITUTION:Semiconductor regions surrounded by insulating films 2 such as SiO2 or the like are formed on the surface of a substrate 1 such as polycristalline Si and a light mitting diode section DA having a P-N junction 5 exposed on the surface of the substrate and a light sensitive transistor TB exposing a P-N junction 10 on the surface of the substrate are formed respectively and a photo transfer layer 13 consisting of SiO2 are provided so that both of the light emitting diode section DA and the light sensitive transistor TB may couple each other and a light reflective layer 14 united with the electrode 11 is also provided on the surface of the layer 13. In this way, a photoisolator can be formed on the same substrate.
JP17981280A 1980-12-19 1980-12-19 Photo isolator Pending JPS57104279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17981280A JPS57104279A (en) 1980-12-19 1980-12-19 Photo isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17981280A JPS57104279A (en) 1980-12-19 1980-12-19 Photo isolator

Publications (1)

Publication Number Publication Date
JPS57104279A true JPS57104279A (en) 1982-06-29

Family

ID=16072316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17981280A Pending JPS57104279A (en) 1980-12-19 1980-12-19 Photo isolator

Country Status (1)

Country Link
JP (1) JPS57104279A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287673A (en) * 1986-06-05 1987-12-14 Kyocera Corp Photo coupler
JPS63102379A (en) * 1986-09-30 1988-05-07 シーメンス、アクチエンゲゼルシヤフト Photocoupler or reflected light barrier and manufacture of the same
JPH07131063A (en) * 1993-11-01 1995-05-19 Nec Corp Multichip module
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
DE19510631B4 (en) * 1994-03-23 2012-06-14 Denso Corporation Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846278A (en) * 1971-10-06 1973-07-02
JPS51118975A (en) * 1975-03-19 1976-10-19 Hitachi Ltd Photo controll semiconductor unitegrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846278A (en) * 1971-10-06 1973-07-02
JPS51118975A (en) * 1975-03-19 1976-10-19 Hitachi Ltd Photo controll semiconductor unitegrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287673A (en) * 1986-06-05 1987-12-14 Kyocera Corp Photo coupler
JPS63102379A (en) * 1986-09-30 1988-05-07 シーメンス、アクチエンゲゼルシヤフト Photocoupler or reflected light barrier and manufacture of the same
US5438210A (en) * 1993-10-22 1995-08-01 Worley; Eugene R. Optical isolation connections using integrated circuit techniques
JPH07131063A (en) * 1993-11-01 1995-05-19 Nec Corp Multichip module
DE19510631B4 (en) * 1994-03-23 2012-06-14 Denso Corporation Semiconductor device

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