JPS57104253A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57104253A
JPS57104253A JP18072580A JP18072580A JPS57104253A JP S57104253 A JPS57104253 A JP S57104253A JP 18072580 A JP18072580 A JP 18072580A JP 18072580 A JP18072580 A JP 18072580A JP S57104253 A JPS57104253 A JP S57104253A
Authority
JP
Japan
Prior art keywords
diffusion layers
shaped
conduction type
polycrystal silicon
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18072580A
Other languages
Japanese (ja)
Inventor
Hideyoshi Shimura
Takashi Osone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP18072580A priority Critical patent/JPS57104253A/en
Publication of JPS57104253A publication Critical patent/JPS57104253A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only

Abstract

PURPOSE:To obtain the memory, which functions at high speed and has high density, by forming a diode for writing information by an opposite conduction type diffusion region shaped into one conduction type substrate and an impurity layer having the same conduction type as the substrate. CONSTITUTION:The p<+> diffusion layers as bit lines and a field oxide film 15 are formed onto the n type substrate, the n<+> polycrystal silicon 16 is shaped onto the diffusion layers and the oxide film, the concentration of the impurities of the n<+> polycrystal silicon 16 is previously made higher than that of the p<+> diffusion layers 14, and the diodes with p-n junctions are formed into the p<+> diffusion layers 14. A layer insulating film 17 is shaped, a contact 18a between aluminum wiring 18 and the n<+> polycrystal silicon 16 is formed to a memory cell section into which a zero information is written, a contact is not shaped to a memory cell section into which a 1 information is written, and a protective film 19 is molded onto the wiring 18. Accordingly, density is increased because the bit lines 20 are formed by the diffusion layers 14 and a word line by aluminum.
JP18072580A 1980-12-19 1980-12-19 Semiconductor memory device Pending JPS57104253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18072580A JPS57104253A (en) 1980-12-19 1980-12-19 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18072580A JPS57104253A (en) 1980-12-19 1980-12-19 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS57104253A true JPS57104253A (en) 1982-06-29

Family

ID=16088211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18072580A Pending JPS57104253A (en) 1980-12-19 1980-12-19 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57104253A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124760A (en) * 1983-01-04 1984-07-18 Nec Corp Read-only memory
JPS59127858A (en) * 1983-01-13 1984-07-23 Seiko Epson Corp Integrated circuit
JPS62238670A (en) * 1986-04-09 1987-10-19 Mitsubishi Electric Corp Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546738A (en) * 1977-06-17 1979-01-19 Nec Corp Read-out exclusive memory device
JPS5482985A (en) * 1977-11-28 1979-07-02 Philips Nv Semiconductor having fixed memory and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546738A (en) * 1977-06-17 1979-01-19 Nec Corp Read-out exclusive memory device
JPS5482985A (en) * 1977-11-28 1979-07-02 Philips Nv Semiconductor having fixed memory and method of fabricating same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124760A (en) * 1983-01-04 1984-07-18 Nec Corp Read-only memory
JPH0345552B2 (en) * 1983-01-04 1991-07-11 Nippon Electric Co
JPS59127858A (en) * 1983-01-13 1984-07-23 Seiko Epson Corp Integrated circuit
JPS62238670A (en) * 1986-04-09 1987-10-19 Mitsubishi Electric Corp Semiconductor memory device

Similar Documents

Publication Publication Date Title
JPS5743438A (en) Semiconductor device and manufacture thereof
KR860001058B1 (en) Semiconductor memory device
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS56100463A (en) Semiconductor memory device
JPS5683060A (en) Semiconductor memory storage device
JPS57104253A (en) Semiconductor memory device
GB1519995A (en) Semiconductor devices
JPS56115557A (en) Manufacture of semiconductor device
JPS574173A (en) Semiconductor device
JPS57104279A (en) Photo isolator
JPS56147446A (en) Semiconductor integrated circuit device
JPS56112761A (en) Manufacture of 3-5 group element semiconductor device
JPS5563860A (en) Junction-type field-effect device
JPS57183065A (en) Semiconductor integrated circuit device
JPS5499531A (en) Semiconductor memory unit
JPS5766660A (en) Semiconductor memory
JPS5376760A (en) Semiconductor rectifying device
GB1536764A (en) Semiconductor devices
JPS566464A (en) Semiconductor device and manufacture thereof
JPS55118665A (en) Semiconductor device
JPS5522878A (en) Insulation gate type field effect semiconductor device
JPS5743459A (en) Semiconductor device
JPS5743454A (en) Semiconductor device
JPS54113280A (en) Production of semiconductor integrated circuit
JPS5720993A (en) Semiconductor storage device