JPS57183065A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS57183065A JPS57183065A JP6910681A JP6910681A JPS57183065A JP S57183065 A JPS57183065 A JP S57183065A JP 6910681 A JP6910681 A JP 6910681A JP 6910681 A JP6910681 A JP 6910681A JP S57183065 A JPS57183065 A JP S57183065A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- junction
- regions
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000002633 protecting effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve protecting effect against impulsive surge, by bettering high-speed response with a Schottkey junction diode and absorbing a great amount of current with a parallel P-N junction diode, when a protection diode is added to an IC to take surge measures. CONSTITUTION:N type layers 302, 306 are formed by diffusion on a P type semiconductor substrate 301. P type regions 304, 305, and an N<+> type region 303 higher in impurity density than the layer 302 is provided in the layer 302. A P type region 307, an N type region 312 existing herein, and an N<+> type region 309 higher in impurity concentration than the layer 306 are formed also in the layer 306. Next, the whole surface is covered with an insulating film 313 and a window is opened. Terminals of power supply 310, input 311 and output 312 are attached to the regions 303, 304 and 308 respectively. Consequently, the P-N junction protection diode, Schottkey junction and transistor are composed of the region 304 and layer 302, the layer 302 and terminal 311, and the regions 306, 307 and 308 respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6910681A JPS57183065A (en) | 1981-05-07 | 1981-05-07 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6910681A JPS57183065A (en) | 1981-05-07 | 1981-05-07 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57183065A true JPS57183065A (en) | 1982-11-11 |
Family
ID=13393038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6910681A Pending JPS57183065A (en) | 1981-05-07 | 1981-05-07 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57183065A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60235449A (en) * | 1984-05-08 | 1985-11-22 | Sanyo Electric Co Ltd | Semiconductor integrated circuit device |
US4680600A (en) * | 1983-06-30 | 1987-07-14 | Fujitsu Limited | Semiconductor device |
-
1981
- 1981-05-07 JP JP6910681A patent/JPS57183065A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4680600A (en) * | 1983-06-30 | 1987-07-14 | Fujitsu Limited | Semiconductor device |
JPS60235449A (en) * | 1984-05-08 | 1985-11-22 | Sanyo Electric Co Ltd | Semiconductor integrated circuit device |
JPH0478016B2 (en) * | 1984-05-08 | 1992-12-10 | Sanyo Electric Co |
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